Phase change memory readout circuit and readout method based on diode gating

A phase-change memory and phase-change storage technology, applied in the field of microelectronics, can solve the problems of poor consistency of the phase-change memory, difficulty in reading data of a read-out circuit of the phase-change memory, and high probability of reading errors, and achieves increased adaptability and good Product consistency, the effect of reducing the difficulty of reading data and the probability of reading errors

CN104616690BActive Publication Date: 2018-06-19SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-06-19

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Abstract

The present invention provides a phase-change memory readout circuit based on diode gating and a readout method, wherein the phase-change memory readout circuit based on diode gating at least includes: a bias circuit for providing a constant current to A bias voltage is generated; a read current limiting circuit is used to limit the read current flowing through the phase-change memory cell on the data bit to be read according to the bias voltage; a reference current limiting circuit is used to provide a reference current, and limit the reference current according to the bias voltage; the comparison circuit is used to compare the current-limited read current with the current-limited reference current, and read the required read data bit according to the comparison result The data stored on the phase-change memory cell. The readout circuit of the phase-change memory based on the diode gating of the present invention can adapt to the deviation in the preparation process of the phase-change memory, so that the phase-change memory has good product consistency, and at the same time reduces the difficulty of data reading and the probability of reading errors.
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Description

technical field

[0001] The invention relates to the technical field of microelectronics, in particular to a phase-change memory readout circuit and a readout method based on diode gating. Background technique

[0002] Phase-change memory is a new type of resistive non-volatile semiconductor memory. It uses chalcogenide compound materials as storage media, and utilizes phase-change materials processed to nanometers in polycrystalline state (the material is in a low-resistance state) and In the amorphous state (the material is in a high-resistance state), different resistance states are used to store data.

[0003] Phase change memory is based on the Ovshinsky electronic effect memory proposed by Ovshinsky in the late 1960s. It generally refers to chalcogenide random access memory, also known as Ovshinsky electric effect unified memory. As a new type of memory, phase change memory, due to its fast read and write speed, high rewritable durability, long information retention ti...

Examples

Embodiment Construction

[0068] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0069] see figure 1 , The first embodiment of the present invention relates to a phase-change memory readout circuit based on diode gating, which is used for reading data stored in a phase-change memory unit on a data bit that needs to be read. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present in...