Phase change memory readout circuit and readout method based on diode gating

Abstract

The present invention provides a phase-change memory readout circuit based on diode gating and a readout method, wherein the phase-change memory readout circuit based on diode gating at least includes: a bias circuit for providing a constant current to A bias voltage is generated; a read current limiting circuit is used to limit the read current flowing through the phase-change memory cell on the data bit to be read according to the bias voltage; a reference current limiting circuit is used to provide a reference current, and limit the reference current according to the bias voltage; the comparison circuit is used to compare the current-limited read current with the current-limited reference current, and read the required read data bit according to the comparison result The data stored on the phase-change memory cell. The readout circuit of the phase-change memory based on the diode gating of the present invention can adapt to the deviation in the preparation process of the phase-change memory, so that the phase-change memory has good product consistency, and at the same time reduces the difficulty of data reading and the probability of reading errors.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a phase-change memory readout circuit and a readout method based on diode gating. Background technique [0002] Phase-change memory is a new type of resistive non-volatile semiconductor memory. It uses chalcogenide compound materials as storage media, and utilizes phase-change materials processed to nanometers in polycrystalline state (the material is in a low-resistance state) and In the amorphous state (the material is in a high-resistance state), different resistance states are used to store data. [0003] Phase change memory is based on the Ovshinsky electronic effect memory proposed by Ovshinsky in the late 1960s. It generally refers to chalcogenide random access memory, also known as Ovshinsky electric effect unified memory. As a new type of memory, phase change memory, due to its fast read and write speed, high rewritable durability, long information retention ti...

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a phase-change memory readout circuit and readout method based on diode gating, which is used to solve the data readout problem of the phase-change memory readout circuit in the prior art. Difficulty of acquisition and high read error probability, and poor product consistency of phase change memory

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