A method for preparing a light-emitting diode chip with full-angle reflectors

A technology of light-emitting diodes and corner reflectors, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of scrapped LED chips and cost losses of manufacturers, saving manufacturing costs, reducing the risk of rupture, and avoiding electrical parameters. bad effect

Active Publication Date: 2018-02-09
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem that the existing technology will cause the LED chip to be scrapped and bring cost loss to the manufacturer, the embodiment of the present invention provides a method for preparing a light-emitting diode chip equipped with a full-angle reflector

Method used

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  • A method for preparing a light-emitting diode chip with full-angle reflectors
  • A method for preparing a light-emitting diode chip with full-angle reflectors
  • A method for preparing a light-emitting diode chip with full-angle reflectors

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Embodiment

[0047] The embodiment of the present invention provides a method for preparing an LED chip with ODR, see figure 1 , the method includes:

[0048] Step 100: Provide an epitaxial wafer.

[0049] In this embodiment, the epitaxial wafer includes a sapphire substrate, a PSS (Patterned Sapphire Substrate, patterned sapphire substrate) layer and an epitaxial layer sequentially formed on the sapphire substrate, and the epitaxial layer includes a N layer sequentially stacked on the PSS layer. type layer, active layer, and P-type layer, and the epitaxial layer is provided with grooves extending from the P-type layer to the N-type layer (see Figure 2a ).

[0050] Figure 2a It is a schematic structural diagram of the LED chip after step 100 is executed. Wherein, 1 is a sapphire substrate, 2 is a PSS layer, 3 is an epitaxial layer, 31 is an N-type layer, 32 is an active layer, and 33 is a P-type layer.

[0051] The composition of the sapphire substrate includes alumina. The PSS lay...

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Abstract

The invention discloses a method for preparing a light-emitting diode chip equipped with a full-angle reflector, which belongs to the technical field of semiconductors. The preparation method includes: providing an epitaxial wafer; forming a scribe line on the front side of the epitaxial wafer; preparing a current blocking layer, a current spreading layer and an electrode on the epitaxial wafer, and thinning the epitaxial wafer; evaporating ODR on the back side of the epitaxial wafer; Laser scribing the front of the epitaxial wafer along the scribing lane; splitting the epitaxial wafer to obtain LED chips; wherein, forming a scribing lane on the front of the epitaxial wafer includes: covering the first area of ​​the front of the epitaxial wafer with photoresist ; Evaporate a gold layer on the second area of ​​the front side of the epitaxial wafer and the photoresist; Form a through hole in the gold layer; Form a scribe line in the epitaxial layer along the through hole in the gold layer; Along the scribe line in the epitaxial layer Die lanes form scribe lanes in the PSS layer; gold layer is removed. The invention solves the problem that the LED chip is scrapped and brings cost loss to the manufacturer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode chip equipped with an omni-angle reflector. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. It has the characteristics of small size, high brightness and low energy consumption. It is widely used in the fields of display screens, backlight sources and lighting. ODR (OmniDirectional Reflector, full-angle reflector) is mainly composed of metal, silicon dioxide, and titanium oxide. It can have high reflectivity for incident light in any direction. Usually, ODR is evaporated on the sapphire substrate of the LED epitaxial wafer. , increase the average reflection efficiency, and improve the light extraction efficiency of the LED chip. [0003] At present, a method for preparing a light-emitting diode chip with a full-angle reflector includes:...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/00H01L33/62H01L33/60
Inventor孙虎周武
OwnerHC SEMITEK SUZHOU