lpp‑euv light source system pumped by multi-pulse combination

An LPP-EUV, light source system technology, applied in the field of plasma type EUV lithography light source, can solve the problem of insufficient pump laser power of the light source, and achieve the effect of optimizing energy conversion efficiency, improving effective output power, and improving output capability

Active Publication Date: 2017-09-26
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this system can well solve the problem of insufficient pumping laser power of the traditional LPP-EUV light source, and can optimize the energy conversion efficiency of LPP-EUV by changing the combination of laser pulses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • lpp‑euv light source system pumped by multi-pulse combination
  • lpp‑euv light source system pumped by multi-pulse combination
  • lpp‑euv light source system pumped by multi-pulse combination

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below through the examples and accompanying drawings, but the protection scope of the present invention should not be limited by this.

[0019] Please see first figure 1 , figure 1 It is a structural schematic diagram of the multi-pulse combined pump LPP-EUV light source system of the present invention. It can be seen from the figure that the composition of the multi-pulse combined pumping LPP-EUV light source system of the present invention includes a pump laser pulse source group 1, a pulse delay adjustment device group 2, a beam pointing adjustment device group 3, an LPP-EUV generating device 4 and a synchronous Signal controller 5. The pump pulses are output from the pump laser pulse sources 1a, 1b,..., 1o, and the pulse combination is generated by the pulse delay adjustment device group 2 and the beam pointing adjustment device group 3, and then enters the LPP-EUV generation device 4 to act on the target , the trig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A multi-pulse combined pumping LPP-EUV light source system is composed of a pumping laser pulse source group, a pulse delay adjustment device group, a beam pointing adjustment device group, an LPP-EUV generating device and a synchronization signal controller. The pump pulse is output by the pump laser pulse source group, and the pulse combination is generated by the pulse delay adjustment device group and the beam pointing adjustment device group, and then enters the LPP-EUV generation device to act on the target, and the triggering of each pump laser pulse source The signal is generated by a sync signal controller. Using this system can not only break through the limitation of insufficient power of the single-pulse pump laser source, but also optimize the energy conversion efficiency by adjusting the combination of pump pulses, thereby improving the power output capability of the LPP‑EUV lithography light source.

Description

technical field [0001] The invention relates to a laser plasma (LPP) extreme ultraviolet (EUV) lithography light source, in particular to a multi-pulse combined pumping LPP-EUV light source system. Background technique [0002] With the rapid development of the electronic information industry, the integration level of semiconductor chips has been greatly improved, and the photolithography technology is moving towards the resolution node of 14nm or even below 10nm. The exposure wavelength of the lithography machine has been developed from 436nm (Hg-g), 365nm (Hg-i) to 248nm (KrF), 193nm (ArF) and 157nm (F 2 ), is developing towards shorter wavelengths such as 13.5nm (EUV) or even 6.X nm. The types of EUV light sources mainly include synchrotron radiation light sources, discharge plasma (DPP) light sources, and laser plasma (LPP) light sources. Synchrotron radiation sources generate EUV radiation by changing the velocity of charged particles in a magnetic field, which is bul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/094H01S3/081
Inventor 张宗昕冷雨欣王成赵全忠王关德
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products