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LPP-EUV (Laser-Produced Plasma-Extreme Ultraviolet Lithography) light source system for multi-pulse combined pump

A technology of LPP-EUV and light source system, which is applied in the field of plasma-type extreme ultraviolet lithography light source, can solve the problem of insufficient pump laser power of the light source, and achieve the effects of optimizing energy conversion efficiency, improving output capacity, and increasing effective output power

Active Publication Date: 2015-05-20
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this system can well solve the problem of insufficient pumping laser power of the traditional LPP-EUV light source, and can optimize the energy conversion efficiency of LPP-EUV by changing the combination of laser pulses

Method used

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  • LPP-EUV (Laser-Produced Plasma-Extreme Ultraviolet Lithography) light source system for multi-pulse combined pump
  • LPP-EUV (Laser-Produced Plasma-Extreme Ultraviolet Lithography) light source system for multi-pulse combined pump
  • LPP-EUV (Laser-Produced Plasma-Extreme Ultraviolet Lithography) light source system for multi-pulse combined pump

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Embodiment Construction

[0018] The present invention will be further described below through the examples and accompanying drawings, but the protection scope of the present invention should not be limited by this.

[0019] Please see first figure 1 , figure 1 It is a structural schematic diagram of the multi-pulse combined pump LPP-EUV light source system of the present invention. It can be seen from the figure that the composition of the multi-pulse combined pumping LPP-EUV light source system of the present invention includes a pump laser pulse source group 1, a pulse delay adjustment device group 2, a beam pointing adjustment device group 3, an LPP-EUV generating device 4 and a synchronous Signal controller 5. The pump pulses are output from the pump laser pulse sources 1a, 1b,..., 1o, and the pulse combination is generated by the pulse delay adjustment device group 2 and the beam pointing adjustment device group 3, and then enters the LPP-EUV generation device 4 to act on the target , the trig...

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Abstract

The invention discloses an LPP-EUV (Laser-Produced Plasma-Extreme Ultraviolet Lithography) light source system for a multi-pulse combined pump. The LPP-EUV light source system is composed of a pump laser pulse source group, a pulse delay regulation device group, a beam direction regulation device group, an LPP-EUV generation device and a synchronous signal controller. The pump laser pulse source group outputs pump pulses, a pulse combination is generated through the pulse delay regulation device group and the beam indication regulation device group; the pulse combination enters into the LPP-EUV generation device, and is acted on a target material; the triggering signal of each pump laser pulse source is generated by the synchronous signal controller. By employment of the LPP-EUV light source system for the multi-pulse combined pump, not only can the restriction that a single pulse pump laser source power is insufficient be overcome, but also the energy conversion efficiency can be optimized through regulating the pump pulse combination, thus the power output capacity of the LPP-EUV photoetching light source is improved.

Description

technical field [0001] The invention relates to a laser plasma (LPP) extreme ultraviolet (EUV) lithography light source, in particular to a multi-pulse combined pumping LPP-EUV light source system. Background technique [0002] With the rapid development of the electronic information industry, the integration level of semiconductor chips has been greatly improved, and the photolithography technology is moving towards the resolution node of 14nm or even below 10nm. The exposure wavelength of the lithography machine has been developed from 436nm (Hg-g), 365nm (Hg-i) to 248nm (KrF), 193nm (ArF) and 157nm (F 2 ), is developing towards shorter wavelengths such as 13.5nm (EUV) or even 6.X nm. The types of EUV light sources mainly include synchrotron radiation light sources, discharge plasma (DPP) light sources, and laser plasma (LPP) light sources. Synchrotron radiation sources generate EUV radiation by changing the velocity of charged particles in a magnetic field, which is bul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/094H01S3/081
Inventor 张宗昕冷雨欣王成赵全忠王关德
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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