Photoresist cleaning liquid with extremely-low corrosion to metals

Abstract

The invention discloses photoresist cleaning liquid for removing the photoresist residues and with extremely-low corrosion to metals and composition thereof. The photoresist cleaning liquid contains (a) quaternary ammonium hydroxide; (b) alkylol amine; (c) solvent; (d) C4-C6 polyhydric alcohol; and (e) thiazole derivative. The photoresist cleaning liquid disclosed by the invention has the advantages that the photoresist photoresistance residues on wafers can be effectively removed, and the corrosion to metals such as copper and aluminium is ultra-low; and the application prospect in the fields of cleaning of semiconductor chips and the like is good.

Description

technical field [0001] The invention discloses a photoresist cleaning solution with extremely low corrosion to metal. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be peeled off before the next process. . This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. [0004] For example, JP1998239865 discloses a cleaning solution for an aqueous system, which consists of tetramethylammonium hydroxide (TMAH), dimethylsulfo...

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Problems solved by technology

However, increasing the alkalinity and operating temperature of the cleaning solu

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