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IGBT (Insulated Gate Bipolar Translator) driving protection circuit

A technology of drive circuit and protection circuit, which is applied in the electronic field, can solve the problems of complex structure and low reliability of IGBT drive protection circuit, and achieve the effect of simple structure and high reliability

Inactive Publication Date: 2015-06-03
CRRC DALIAN R & D CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides an IGBT drive protection circuit, which is used to solve the problems of complex structure and low reliability of the IGBT drive protection circuit in the prior art

Method used

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  • IGBT (Insulated Gate Bipolar Translator) driving protection circuit
  • IGBT (Insulated Gate Bipolar Translator) driving protection circuit
  • IGBT (Insulated Gate Bipolar Translator) driving protection circuit

Examples

Experimental program
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Embodiment Construction

[0012] figure 1 It is a schematic structural diagram of Embodiment 1 of the IGBT drive protection circuit provided by the present invention. Such as figure 1 As shown, the circuit includes: a power supply circuit 100, N driving circuits 110;

[0013] The input terminal of the power supply circuit is connected to the input voltage, and the N output terminals of the power supply circuit are respectively connected to the power supply terminals of the N drive circuits;

[0014] The power supply circuit is used to provide power for the N drive circuits;

[0015] The N drive circuits are used to provide turn-on and turn-off voltages for the N IGBTs.

[0016] The power supply circuit in this embodiment may be implemented by using a forward topology, or a push-pull topology, or a half-bridge topology, or a bridge topology, which is not limited in this embodiment. The voltages output by the N isolated output terminals of the power circuit in this embodiment may be the same or diffe...

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PUM

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Abstract

The invention provides an IGBT (Insulated Gate Bipolar Translator) driving protection circuit, comprising a power circuit and N driving circuits, wherein the input end of the power circuit is connected with an input voltage; the N output ends of the power circuit are respectively connected with the power supply ends of the N driving circuits; the power circuit is used for providing power to the N driving circuits; the N driving circuits are used for providing turn-on and turn-off voltages for N IGBTs. According to the IGBT driving protection circuit, one power circuit is used for providing power to the driving circuits of the N IGBTs, so that the N IGBTs are driven separately, and the IGBT driving protection circuit has the advantages of simple structure and high reliability.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an IGBT drive protection circuit. Background technique [0002] With the development of power electronics technology, Insulated Gate Bipolar Translator (IGBT) has been widely used in traction electric drive, power transmission and conversion, active filtering, etc. IGBT integrates the advantages of bipolar power transistors and power metal-oxide-semiconductor field effect transistors (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET for short), with voltage control, large input impedance, low driving power, simple control circuit, It has the advantages of small switching loss, fast on-off speed and high operating frequency. The rational design of IGBT drive protection circuit plays a vital role in the application field of IGBT. [0003] At present, in a bridge circuit or a voltage conversion circuit where multiple IGBTs do not share a common ground, the driving cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02H7/20
CPCH02M1/08H02H7/20
Inventor 张硕姜涛孙佳伟
Owner CRRC DALIAN R & D CO LTD