Back lighting type TDI image sensor and electronic shutter control method thereof

An image sensor, back-illuminated technology, used in image communication, radiation control devices, semiconductor/solid-state device manufacturing, etc. Effect

Active Publication Date: 2015-06-17
长春长光辰芯微电子股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this "movement" is stepping along with the TDI pixel or its grid

Method used

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  • Back lighting type TDI image sensor and electronic shutter control method thereof
  • Back lighting type TDI image sensor and electronic shutter control method thereof
  • Back lighting type TDI image sensor and electronic shutter control method thereof

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Embodiment Construction

[0026] like figure 1 , 2 As shown, the back-illuminated TDI image sensor of the present invention includes a substrate 101, a channel 102 prepared on the substrate 101, and gates arranged in rows and columns prepared on the channel 102, and an anti-halation drain 105 and anti-halation gate 104; the substrate 101 includes barrier layers 103 arranged at intervals along the grid column direction; the contact surface of the barrier layer 103 and the substrate 101 forms a PN junction, and the barrier layer 103 is doped at a concentration of η b ≥1000η s , η s is the substrate doping concentration; the gate region S above the barrier layer 103 2 、...S 2n 、...S N For the storage gate region, the gate region I above the interval between adjacent barrier layers 103 1 ,... I 2n-1 , ... are the integral gate area, the gate area G between the storage gate area and the integral gate area 1 ,...G m ...is an isolation gate region; the channel region under the integration gate region...

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Abstract

The invention relates to a back lighting type TDI image sensor and an electronic shutter control method thereof. The sensor comprises a substrate, a channel and grids, wherein the channel is prepared on the substrate, and the grids are prepared on the channel and arranged in parallel; the substrate comprises block layers which are arranged longitudinally along the grids at intervals; contact surfaces of the block layers and the substrate form PN conjunctions; storage grid areas are located above the block layers, integral grid areas are located above the intervals between adjacent block layers, and block grid areas are located between the storage grid areas and the integral grid areas. By the aid of sequential control, charges collected and accumulated in integral time are taken as effective charges to be read out, and charges generated under the block layers enter adjacent charge collection areas under the grids through a drift or diffusion effect and cannot be accumulated into effective signal charges. The integral time is reduced by the aid of the method that the block layers are arranged in the substrate at intervals, and the motion blur effect is effectively reduced.

Description

technical field [0001] The invention belongs to the technical field of TDI image sensors, and relates to a backside illuminated (BSI, Backside Illuminated) TDI (Time Delay Integration, time delay integration) image sensor and an electronic shutter control method thereof. Background of the invention [0002] In CCD image sensor applications, electronic shutter technology can reduce the effect of motion blur, so it is widely used. But so far, this technology has not been applied to TDI image sensors. Motion blur is caused by the movement of the scene during the exposure time. In a TDI image sensor, the line being exposed and integrated "moves" with the motion of the scene. However, since this "movement" is stepping along with the TDI pixel or its grid plate, it is a discontinuous movement, so the motion blur effect will also occur. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a back-illuminated TDI image sens...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/761H04N5/353
Inventor 艾格尼丝·克莱曼阿德里·米尔普周泉王欣洋
Owner 长春长光辰芯微电子股份有限公司
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