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Fabrication method and application of highly ordered noble metal nanostructure arrays on semiconductor surfaces based on defect induction

A nanostructure and surface height technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology and other directions, can solve the problems of uncontrolled periodicity and complicated auxiliary process steps, and achieve easy control, low cost and simple operation. Effect

Inactive Publication Date: 2017-01-18
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In summary, the metal nanostructures obtained by direct light-assisted chemical deposition methods that are more suitable for industrialization in the prior art are randomly distributed, and their periodicity cannot be controlled; and in order to obtain periodic metal nanostructure arrays Generally, etching and masking are required, followed by physical sputtering or vapor deposition; while auxiliary processes such as etching and masking are complex

Method used

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  • Fabrication method and application of highly ordered noble metal nanostructure arrays on semiconductor surfaces based on defect induction
  • Fabrication method and application of highly ordered noble metal nanostructure arrays on semiconductor surfaces based on defect induction
  • Fabrication method and application of highly ordered noble metal nanostructure arrays on semiconductor surfaces based on defect induction

Examples

Experimental program
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Effect test

Embodiment 1

[0053] Embodiment 1, using nanoimprint technology as a processing method, using a patterned sapphire substrate (PSS for short) as a template, preparing a highly ordered Ag nanosheet array on the surface of a p-GaAs wafer

[0054] Sample cleaning: Place the cut p-GaAs wafer (5×5×0.5 mm) in acetone, absolute ethanol and deionized water for 10 min to wash away the surface impurities, and then use N 2 Dry the surface moisture; at this point the p-GaAs wafer is marked as S1.

[0055] Surface patterning treatment: firstly stack the cleaned p-GaAs wafer 2 and the sapphire substrate PSS template 1 together in sequence, as figure 1 As shown in (a), then put it into the mold of the tablet press, apply a pressure of about 3MPa, and hold it for 10s; then peel off the patterned p-GaAs wafer 3 from the PSS template to realize the transfer of the pattern on the PSS surface on the p-GaAs wafer; then the patterned p-GaAs wafer 3 is subjected to secondary cleaning, the method is as described a...

Embodiment 2

[0066] Embodiment 2, prepare highly ordered metal Cu nanostructure array on the surface of p-InP wafer

[0067] ①Sample cleaning: Place the cut p-InP wafer (5×5×0.5mm) in acetone, absolute ethanol and deionized water for 10 minutes to wash away the surface impurities, and then use N 2 Dry surface moisture;

[0068] ②Surface patterning treatment: Roller-type nanoimprinting technology is adopted. The template is a roller with micro-nano pattern (PSS) on the surface. Place the p-InP wafer under the roller, press down and push the roller, and the roller template The pattern on the surface is transferred to the p-InP wafer; as attached figure 2 shown. Then, the patterned p-InP wafer is cleaned a second time, and the cleaning method is as described in ①.

[0069] ③Immerse the prepared patterned p-InP wafer in an etching solution of concentrated hydrochloric acid with a mass fraction of 37% to remove the surface oxide layer, then rinse it with deionized water and wash it with N ...

Embodiment 3

[0071] Example 3, Preparation of a highly ordered bimetallic Ag-Cu nanostructure array on the surface of a p-GaAs wafer

[0072] Sample cleaning: as described in Example 1.

[0073] Surface patterning treatment: as described in Example 1.

[0074] Removal of surface oxide layer: as described in Example 1.

[0075] Preparation of highly ordered bimetallic Ag-Cu nanostructure arrays on the surface of p-GaAs wafers: using laser-assisted chemical deposition, laser selection and light propagation path are as described in Example 1, as attached image 3 shown. The difference is:

[0076] Place the surface-patterned p-GaAs wafer processed in the previous steps in a polytetrafluoroethylene tank, and first add a small amount of 0.1MCu(CH3COO) 2 Drop it into the polytetrafluoroethylene tank so that it can immerse the patterned p-GaAs wafer, and adjust the laser spot power density to about 1.4×10 3 W / m 2 Carry out laser-assisted chemical deposition, the reaction time is 30s, after ...

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Abstract

The invention relates to a defect induction based preparing method for a highly ordered precious metal nano-structural array in the semiconductor surface and an application thereof. The method comprises that a semiconductor chip or a thin film is regarded as a substrate, the imaging process is carried out on the semiconductor surface, chemical sediment with the laser assistance is carried out by utilizing high chemical activity characteristics of the defect position, and the highly ordered precious metal nano-structural array is obtained on the semiconductor surface. According to the method, the operation is simple, the cost is low, the efficiency is high, the environment friendliness and the non-pollution are achieved, the large-scaled mass production is easy to carry out, and the method can be used for preparing a surface enhanced Raman substrate and the fields such as super-hydrophobic, self-cleaning and surface accessory.

Description

technical field [0001] The invention relates to a method for preparing a highly ordered noble metal nanostructure array on a semiconductor surface based on defect induction, and belongs to the technical field of micro-nano processing on the surface of semiconductor materials. Background technique [0002] Plasmon polaritons (SPR) are collective oscillations formed by conduction band electrons near the Fermi level in metals driven by an external electromagnetic field. The coupling of electromagnetic waves and free electrons on the metal surface forms a near-field electromagnetic wave that propagates along the metal surface. In the resonance state, the energy of the electromagnetic field is effectively converted into the collective vibration energy of the free electrons on the metal surface. For metallic nanostructures whose dimensions are smaller than the wavelength of the incident light, surface plasmon waves can be confined at the interface between the nanostructure and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 刘铎赵东方林晓煜高乃坤林贯军贾冉张茜
Owner SHANDONG UNIV