Unlock instant, AI-driven research and patent intelligence for your innovation.

NAND bad block processing method and NAND flash memory device

A processing method and equipment technology, applied in the storage field, can solve problems such as low access efficiency and waste of storage space, and achieve the effects of reducing additional requirements, improving reliability, and speeding up loading speed

Active Publication Date: 2015-07-01
RDA CHONGQING MICROELECTRONICS TECH CO LTD
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For the problems existing in the prior art, the object of the present invention is to provide a NAND bad block processing method and a NAND flash memory device, to solve the technical problems of low access efficiency and waste of storage space in the NAND bad block processing method of the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NAND bad block processing method and NAND flash memory device
  • NAND bad block processing method and NAND flash memory device
  • NAND bad block processing method and NAND flash memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Typical embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention is capable of various changes in different embodiments without departing from the scope of the present invention, and that the description and drawings therein are illustrative in nature and not limiting. this invention.

[0030] The NAND bad block processing method of the embodiment of the present invention can be used in the NAND flash memory device of the embodiment of the present invention.

[0031] The NAND bad block processing method and the NAND flash memory device of the preferred embodiment of the present invention will be introduced in detail below.

[0032] Such as figure 1 As shown, the structure diagram of the NAND flash memory device according to the embodiment of the present invention, the storage space of the entire NAND flash memory device is divided into four pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an NAND bad block processing method and an NAND flash memory device. The NAND flash memory device comprises a data area, a substituting area, a BBT (bad block table) area and a BBT index area, wherein the data area comprises a plurality of blocks used for storing data; the substituting area comprises a plurality of blocks which are used as substituting blocks for substituting for more than one bad block when the more than one block in the data area or the substituting area is damaged to become bad blocks; the BBT area is used for storing bad block tables indicating mapping relations between the bad blocks and the corresponding substituting blocks; the BBT index area is positioned in the assigned block and stores index files which comprise index items guiding an address of the block where the BBT area is positioned. By the aid of the NAND bad block processing method and the NAND flash memory device, extra requirements of bad block processing on a storage space can be reduced.

Description

technical field [0001] The invention relates to a storage method, in particular to a storage type flash memory (NAND FLASH, NAND for short) bad block processing method and a NAND flash memory device. Background technique [0002] Due to the advantages of large storage capacity and low price, NAND flash memory devices are now widely used in consumer electronics related products. [0003] The storage space of existing NAND flash memory devices consists of multiple blocks (blocks), each block includes multiple pages (pages), each page consists of multiple storage units, and each storage unit can store 1 bit ( bit) data. NAND flash memory devices have the characteristics of fast writing (programming) and erasing operations. For NAND page writing operations, it is written in units of pages, that is, the amount of data written each time is 1 page; for NAND erasing In addition to the function, the erase operation is performed in units of blocks, that is, the unit size of each era...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F11/07G06F12/02
Inventor 金渝吴付利
Owner RDA CHONGQING MICROELECTRONICS TECH CO LTD