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Flash memory device and erasing method thereof

A memory and memory cell technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as reducing the service life of flash memory, avoid unnecessary programming and erasing actions, and prolong service life.

Active Publication Date: 2018-07-06
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the known erasing method can effectively improve the over-erased situation of memory cells, the steps of pre-programming, erasing, and post-programming must be performed every time the memory is erased, which will greatly reduce the use of flash memory life

Method used

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  • Flash memory device and erasing method thereof
  • Flash memory device and erasing method thereof

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Embodiment Construction

[0022] figure 1 For a schematic diagram illustrating a flash memory device according to an embodiment of the present invention, please refer to figure 1 . Wherein the flash memory device can be, for example, a serial parallel interface (Serial Parallel Interface, SPI) flash memory device, and the flash memory device includes a memory unit 102, a sense amplifier 104, and a control unit 106, wherein the control unit 106 is coupled to the memory unit 102 and a sense amplifier 104 , and the sense amplifier 104 is also coupled to the memory unit 102 . The memory unit 102 includes a plurality of memory blocks, and each memory block includes a plurality of pages composed of memory cells. Under the structure of the flash memory, the memory block is the smallest unit of erasing, and the page in the memory block is the smallest unit of programming (also known as writing), and the page that has been written with data must be erased first Data can only be written again after erasing, s...

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PUM

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Abstract

The invention discloses a flash memory device and its erasing method, which detects whether the memory block corresponding to the erasing command has been erased, and preprograms the memory only if the memory block corresponding to the erasing command has not been erased blocks. The invention can prolong the service life of the flash memory device.

Description

technical field [0001] The present invention relates to a memory device, and in particular to a serial parallel interface (Serial Parallel Interface, SPI) flash memory device and an erasing method thereof. Background technique [0002] Non-volatile memory devices (such as flash memory) have the characteristic of storing data without power supply, and have functions of erasing and writing, so they are widely used in various electronic products. [0003] The conventional flash memory erasing method includes steps of pre-program, erase, and post-program. The pre-programming step can write 0 to the memory cell of the flash memory to be erased, so as to adjust the threshold voltage of the memory cell in the block to be erased to the same voltage, and improve the stability of erasing the flash memory data , the erasing step can write 1 to the memory cell, and the subsequent programming step can increase the threshold voltage of the memory cell whose threshold voltage is too low, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/14G11C16/06
Inventor 柳弼相
Owner WINBOND ELECTRONICS CORP