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Manufacturing method of fuse and fuse

A fuse manufacturing and fuse technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc. The effect of resistance

Active Publication Date: 2017-11-07
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In this technical solution, multiple combined layers are used in the thick metal layer, and the combined layer uses the first metal layer and the second metal layer with a higher resistivity than the first metal layer. In this way, by increasing the resistivity of the metal, the The resistance value of the large fuse solves the problem that the fuse cannot be blown

Method used

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  • Manufacturing method of fuse and fuse
  • Manufacturing method of fuse and fuse
  • Manufacturing method of fuse and fuse

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Embodiment Construction

[0032] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0033] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0034] Figure 5 A flowchart of a method for manufacturing a fuse according to an embodiment of the present invention is shown.

[0035] Such as Figure 5 As shown, the fuse manufacturing method o...

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Abstract

The invention provides a method for manufacturing a fuse, comprising: depositing a titanium layer above a substrate; depositing a first titanium nitride layer on the titanium layer; depositing a thick metal layer on the first titanium nitride layer , the thick metal layer includes a plurality of composite layers, wherein each composite layer includes a first metal layer and a second metal layer, the resistivity of the first metal layer is smaller than the resistivity of the second metal layer ; on said thick metal layer, depositing a second titanium nitride layer. Correspondingly, the present invention also provides a fuse. The technical scheme of the invention solves the problem that the fuse cannot be blown because the top layer of the fuse is made of thick metal, and increases the resistance of the fuse so that the fuse can be blown.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular, to a method for manufacturing a fuse and the fuse. Background technique [0002] In the integrated circuit manufacturing process, the fuse structure is usually used to adjust the frequency of the product oscillator. The fuse is essentially a resistor, and its material is usually a conductive metal or polysilicon that is easy to melt. Such as figure 1 As shown, the circuit principle of the fuse structure is a series of resistors connected in parallel. Each fuse is equivalent to a resistor Rx. Every time a fuse is burned, it is equivalent to disconnecting a resistor, and the total parallel resistance will change by one correspondingly. Value△R 并 Specifically, it can be calculated by the parallel circuit resistance calculation formula: 1 / R = (1 / R1+1 / R2+...+1 / Rn, the number of resistors here is not fixed, and it can actually be determined according to the product frequ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/525
Inventor 崔金洪
Owner FOUNDER MICROELECTRONICS INT