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Fuse wire manufacturing method and fuse wire

A fuse manufacturing and fuse technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc. The effect of resistance

Active Publication Date: 2015-08-12
FOUNDER MICROELECTRONICS INT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In this technical solution, multiple combined layers are used in the thick metal layer, and the combined layer uses the first metal layer and the second metal layer with a higher resistivity than the first metal layer. In this way, by increasing the resistivity of the metal, the The resistance value of the large fuse solves the problem that the fuse cannot be blown

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  • Fuse wire manufacturing method and fuse wire
  • Fuse wire manufacturing method and fuse wire
  • Fuse wire manufacturing method and fuse wire

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Embodiment Construction

[0032] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0033] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0034] Figure 5 A flowchart of a method for manufacturing a fuse according to an embodiment of the present invention is shown.

[0035] Such as Figure 5 As shown, the fuse manufacturing method a...

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Abstract

The invention provides a fuse wire manufacturing method. The method comprises depositing a titanium layer on a substrate, depositing a first titanium nitride layer on the titanium layer, depositing a thick metal layer on the first titanium nitride layer, and depositing a second titanium nitride layer on the thick metal layer; and the thick metal layer comprises a plurality of combined layers, each combined layer comprises a first metal layer and a second metal layer, and the electrical resistivity of the first metal layer is less than the electrical resistivity of the second metal layer. Correspondingly, the invention further provides the fuse wire. Through the technical scheme of the invention, the problem that the fuse wire cannot be fused due to adopted thick metal at the top layer of the fuse wire is solved, resistance of the fuse wire is increased, and then the fuse wire can be fused.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular, to a method for manufacturing a fuse and the fuse. Background technique [0002] In the integrated circuit manufacturing process, the fuse structure is usually used to adjust the frequency of the product oscillator. The fuse is essentially a resistor, and its material is usually a conductive metal or polysilicon that is easy to melt. Such as figure 1 As shown, the circuit principle of the fuse structure is a series of resistors connected in parallel. Each fuse is equivalent to a resistor Rx. Every time a fuse is burned, it is equivalent to disconnecting a resistor, and the total parallel resistance will change by one correspondingly. Value△R 并 Specifically, it can be calculated by the resistance calculation formula of the parallel circuit: 1 / R parallel = (1 / R1+1 / R2+...+1 / Rn, the number of resistors here is not fixed, and it can actually be determined according to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/525
CPCH01L21/7685H01L23/525
Inventor 崔金洪
Owner FOUNDER MICROELECTRONICS INT