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Read control circuit for retention memory

A technology for reading control and circuits, applied in electrical components, electronic switches, information storage, etc., can solve problems such as large quiescent current, and achieve the effect of reducing quiescent current consumption

Active Publication Date: 2015-09-09
WUXI ZGMICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But usually the larger the resident memory, the larger the quiescent current it consumes

Method used

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  • Read control circuit for retention memory
  • Read control circuit for retention memory
  • Read control circuit for retention memory

Examples

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so as to help understand the content of the present invention.

[0035] A read control circuit for resident memory, including a power converter outputting a DC power supply, a resident memory unit and a read / write circuit for performing read / write operations on the resident memory, the output of the power converter The end is connected to the power end of the read / write circuit, and also includes:

[0036] A voltage regulator for providing a third DC power supply with adjustable voltage, the voltage range of the third DC power supply is from a predetermined minimum voltage value to a predetermined maximum voltage value, and the predetermined maximum voltage value of the third DC power supply is equal to that of the power converter the voltage value;

[0037] The control processing unit is used to control the voltage of the third DC power supply ...

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PUM

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Abstract

A read control circuit for a retention memory comprises a power converter outputting direct current, a retention memory unit, a read / write circuit, a voltage regulator and a CPU (control processing unit), wherein the output end of the power converter is connected with the read / write circuit; the voltage regulator provides a voltage-adjustable third direct-current power supply, the voltage of the third direct-current power supply ranges from a preset minimum value to a preset maximum value, and the preset maximum voltage value is equal to a voltage value of the power converter; the control processing unit controls the voltage of the third direct-current power supply to increase from the preset minimum value to the preset maximum value when the CPU is switched to a work state from a standby state and controls the voltage of the third direct-current power supply to decrease from the preset maximum value to the preset minimum value when the CPU is switched to the standby state from the work state, the output end of the CPU is connected with the control end of the voltage regulator, and the output end of the voltage regulator is connected with a power supply end of the retention memory unit. The power voltage of the retention memory can be reduced to a lower value when the CPU is ready to start the standby state due to the voltage regulator, and accordingly, the consumption of static current of the retention memory is reduced.

Description

technical field [0001] The invention relates to a read control circuit, in particular to a read control circuit for resident memory. Background technique [0002] In some ultra-low power systems, such as Bluetooth 4.0 systems, it needs to be powered by disposable batteries for more than several months. Among them, resident memory (Retention Memory) is usually used to save some AP (application CPU: Application Processor) or CPU (central CPU: Central Processing Unit) or MCU (single-chip microcomputer: Micro Control Unit) operating status data. For example, a wearable human health monitoring device needs to continuously store historical human health data (such as blood pressure, heartbeat times, etc.). Sudden drastic changes may indicate a precursor to a major disease in human health, and wearable human health monitoring devices can generate early warning notifications. [0003] Now all power is supplied to AP or CPU or MCU, read / write circuit and resident memory through DC-D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30G06F1/32H03K17/56
Inventor 王钊王才宝
Owner WUXI ZGMICRO ELECTRONICS CO LTD
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