Semiconductor devices with core-shell structures

Abstract

A device structure includes: a core structure formed on a support, and a shell material formed on the core structure and surrounding at least part of the core structure. The shell material and the core structure are configured to form a quantum-well channel in the shell material.

Description

Technical field [0001] The technology described in the present invention generally relates to semiconductor devices, and more specifically, to the manufacture of semiconductor devices. Background technique [0002] Traditional planar devices usually have limitations in miniaturization and selection of suitable materials. As the component size of semiconductor devices continues to shrink (for example, into the sub-50nm range), various problems such as short channel effects and poor sub-threshold characteristics usually become more serious in traditional planar devices. New device geometries with enhanced performance (such as three-dimensional device structures (for example, FinFET)) and heterogeneous integration of different high-mobility channels for N-MOS and P-MOS devices have been developed to advance devices and circuits Development towards higher packing density. Summary of the invention [0003] In order to solve the defects in the prior art, the present invention provides...

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Problems solved by technology

[0002] Conventional planar devices often have limitations in terms of miniaturization and selection of suitable materials

As feature dimensions of semiconductor devices continue to shrink (e.g., into the sub-50nm range), various issues such as short-channel effects and poor subthreshold characteristics often become more severe in conventional planar devices

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