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Semiconductor power conversion device

A power conversion device, power conversion technology, applied in the direction of output power conversion device, AC power input conversion to DC power output, electrical components, etc., can solve the problem of increasing on-off frequency, reducing gate voltage, increasing loss of semiconductor devices, etc. question

Inactive Publication Date: 2017-09-08
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As a method of suppressing the temperature cycle, for example, the following Patent Document 1 discloses a technique of increasing the loss of the semiconductor device by increasing the gate resistance of the semiconductor device and lowering the gate voltage, so that The temperature rises
In addition, Patent Document 2 below discloses a technique in which the loss of a semiconductor device is increased by increasing the on-off frequency.

Method used

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  • Semiconductor power conversion device
  • Semiconductor power conversion device
  • Semiconductor power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0022] figure 1 It is a figure which shows the structural example of the semiconductor power conversion apparatus concerning this embodiment. The semiconductor power conversion device includes a converter voltage command calculation unit 1 , a voltage control unit 2 , a PWM (Pulse Width Modulation) signal generation unit 3 , a semiconductor power converter 4 , a load 5 , a bypass unit 6 , and a current detection unit 7 .

[0023] The converter voltage command calculation unit 1 calculates a voltage command value Vref (first voltage command value) for controlling the operation of the semiconductor power converter 4 connected to the load 5 , and outputs it to the voltage control unit 2 . This is the same as the existing structure.

[0024] The voltage control unit 2 superimposes a certain frequency band on the voltage command value Vref input from the converter voltage command calculation unit 1 in order to control the output current value Iout from the semiconductor power conv...

Embodiment approach 2

[0057] In Embodiment 1, an LC resonant circuit is formed by including a capacitor and an inductor inside the bypass unit 6 . However, depending on the structure of the device, an inductance component (inductor) may be connected in advance to the output of the semiconductor power converter 4 for the purpose of suppressing a surge at the load 5 terminal or the like. In this case, an LC resonant circuit can be configured by adding a capacitor and combining it with an inductance component (inductor) connected in advance.

[0058] Figure 7 It is a diagram showing the state of the output current Iout output from the semiconductor power conversion device and the current flowing to the load and the bypass unit in the present embodiment. and in Embodiment 1 Figure 6 Similarly, for simplicity of description, the semiconductor power converter 4a is assumed to be a single phase, and the load 5a and the bypass unit 6a are also configured to correspond to the single phase. In addition,...

Embodiment approach 3

[0064] In Embodiment 1, a method was described in which the superimposition amount of the superimposition component Vc is controlled by feedback control in the voltage control unit 2 , but the superimposition amount of the superimposition component Vc may be controlled by feedforward control.

[0065] Figure 8 It is a figure which shows the structural example of the voltage control part of this embodiment. The voltage control unit 2 a has a superposition amount calculation unit 21 , a superimposition frequency signal transmitter 22 , a multiplier 23 , an adder 24 , and an Iout estimation unit 25 . Iout estimating unit 25 inputs voltage command value Vref and impedance information of load 5 , and estimates output current value Iout from semiconductor power converter 4 using voltage command value Vref and impedance information of load 5 . The user or the like obtains the impedance information of the load 5 by measurement or the like in advance, and inputs it to the Iout estima...

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Abstract

It has: a semiconductor power converter (4), which uses switching elements (42-1 to 42-6) to perform power conversion, and supplies power to a load (5); a converter voltage command calculation unit (1), whose output is used for semiconductor power A voltage command value (Vref) for controlling the inverter (4); a voltage control unit (2) that superimposes a second voltage command value on the voltage command value (Vref) to generate a voltage command value (Vref2); a PWM signal generation unit ( 3) generating gate signals for controlling driving of switching elements (42-1 to 42-6) based on a voltage command value (Vref2), and outputting them to a semiconductor power converter (4); and a bypass unit (6 ), which is connected in parallel with the load (5) with respect to the semiconductor power converter (4), and the second voltage command value from the output current (Iout) output from the semiconductor power converter (4) to the load (5) The frequency of the current shunt.

Description

technical field [0001] The invention relates to a semiconductor power conversion device and an output current control method for improving temperature cycle tolerance. Background technique [0002] Currently, in semiconductor power converters, since the original purpose of the converter is to change the output voltage at any time during operation, the amplitude of the output current also changes with the change in the output voltage. Since the temperature of the semiconductor device constituting the semiconductor power converter also changes according to the change of the output current, the temperature of the semiconductor device due to the temperature cycle ( power cycling / thermal cycling) to degrade. [0003] As a method of suppressing the temperature cycle, for example, the following Patent Document 1 discloses a technique of increasing the loss of the semiconductor device by increasing the gate resistance of the semiconductor device and lowering the gate voltage, so th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/48
CPCH02M1/126H02M7/5387H02M7/5395H02M1/327H02M1/08H02M7/48H02M7/527H02M7/53846H02M1/0009
Inventor 市原昌文
Owner MITSUBISHI ELECTRIC CORP