Device Simulation Methods for Integrated Circuits
A device simulation and integrated circuit technology, which is applied in the direction of instruments, electrical digital data processing, special data processing applications, etc., can solve the problem of inaccurate MOS variable capacitor simulation, and achieve the effect of improving accuracy
Active Publication Date: 2018-03-23
SEMICON MFG INT (SHANGHAI) CORP
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[0005] The main purpose of the present invention is to provide a device simulation method for integrated circuit design, to solve the problem of inaccurate simulation of MOS variable capacitors in the prior art
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[0032] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.
[0033] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.
[0034] An embodiment of the present invention...
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The invention discloses a device simulation method for integrated circuits. The device simulation method for an integrated circuit includes: obtaining an equivalent circuit model of a MOS variable capacitor in an integrated circuit; extracting an auxiliary characteristic equation of a MOS variable capacitor from the equivalent circuit model, wherein, through a plurality of different measurement frequencies Measure the MOS variable capacitor, wherein multiple different measurement frequencies correspond to multiple values of the auxiliary characteristic equation; obtain a predetermined characteristic equation that simulates the characteristics of the MOS variable capacitor; calculate and obtain the predetermined characteristic equation according to the multiple values of the auxiliary characteristic equation A plurality of values of the characteristic equation; and obtaining a characteristic curve simulating the characteristic of the MOS variable capacitor according to the plurality of values of the predetermined characteristic equation. Through the present invention, the problem of inaccuracy in simulating MOS variable capacitors in the prior art is solved, and the effect of improving accuracy in simulating MOS variable capacitors is achieved.
Description
technical field [0001] The invention relates to the field of integrated circuit design, in particular to a device simulation method for integrated circuits. Background technique [0002] As a very important integrated radio frequency passive device, MOS variable capacitors are widely used in circuit design, such as voltage-controlled oscillators. Therefore, in the circuit simulation process of integrated circuit design, it is a very important step to accurately simulate and extract the parameters of the MOS variable capacitor. figure 1 It shows a cross-sectional view of a MOS variable capacitor structure usually used, the gate is used as port 1 (Port1), and the source and drain are used as port 2 (Port2). [0003] In the prior art, the method for establishing the MOS variable capacitance model is based on the Bsim model. Since the Bsim model is a charge-based model, after deriving the curve obtained based on the Bsim model, the obtained derivative curve is at 0V bias There...
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IPC IPC(8): G06F17/50
Inventor 盛亚陈威姚晓芳
Owner SEMICON MFG INT (SHANGHAI) CORP