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Collector structure of semiconductor device and ti-igbt

A collector and semiconductor technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of poor internal current distribution uniformity, device short-circuit resistance capability and power cycle capability, etc., to improve short-circuit resistance and power cycle capabilities, Suppression of bounce phenomenon, high uniformity effect

Active Publication Date: 2020-01-31
SHANGHAI LIANXING ELECTRONICS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method will lead to poor internal current distribution uniformity when the device is working, resulting in poor short-circuit resistance and power cycle capability of the device.

Method used

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  • Collector structure of semiconductor device and ti-igbt
  • Collector structure of semiconductor device and ti-igbt
  • Collector structure of semiconductor device and ti-igbt

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Based on the core idea of ​​the present invention, this embodiment provides a collector structure of a semiconductor device, the insulator of the collector structure is disposed on the side of the collector region and the short-circuit region away from the drift region.

[0045] Specifically, the collector structure provided by this embodiment is as Figure 5 shown, including:

[0046] The buffer layer formed in the surface of the drift region 52, the doping type of the buffer layer is the same as the doping type of the drift region 52, the buffer layer includes: a first buffer layer 531 and a second buffer layer 532, the first buffer layer The layer 531 is isolated from the second buffer layer 532;

[0047] The collector region 533 formed in the surface of the first buffer layer 531, the other surface of the collector region 533 facing away from the drift region 52 is covered by the first buffer layer 531, the doping type of the collector region 533 is related to the ...

Embodiment 2

[0059] Based on the first embodiment above, this embodiment provides a collector structure, the short-circuit region of the collector structure is not wrapped by the buffer layer.

[0060] Specifically, the collector structure provided by this embodiment is as Figure 6 shown, including:

[0061] A buffer layer 631 formed in the surface of the drift region 62, the doping type of the buffer layer 631 is the same as that of the drift region 62;

[0062] The collector region 632 formed in the surface of the buffer layer 631, the other surface of the collector region 632 facing away from the drift region 62 is covered by the buffer layer 631, the doping type of the collector region 632 is the same as the doping type of the drift region 62 type opposite;

[0063] The short-circuit region 633 formed in the surface of the drift region 62, the doping type of the short-circuit region 633 is the same as the doping type of the drift region 62, the short-circuit region 633 is isolated f...

Embodiment 3

[0069] Based on the first embodiment above, this embodiment provides a collector structure, the collector region and the short circuit region of the collector structure are not wrapped by the buffer layer.

[0070] Specifically, the collector structure provided by this embodiment is as Figure 7 shown, including:

[0071] A collector region 731 formed on the surface of the drift region 72, the doping type of the collector region 731 is opposite to that of the drift region 72;

[0072] A short-circuit region 732 formed on the surface of the drift region 72, the doping type of the short-circuit region 732 is the same as that of the drift region 72, and the short-circuit region 732 is isolated from the collector region 731;

[0073] The insulator 733 covering the collector between the collector region 731 and the short-circuit region 732, the surface of the insulator 733 on the side away from the drift region 72 is in contact with the surface of the collector between the collect...

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Abstract

The invention provides a collector structure of a semiconductor device and a TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor). The collector structure comprises a collector region, a short-circuit region, a collector and an insulator, wherein the collector region is opposite to a drift region in the aspect of doping type; the short-circuit region is identical to the drift region in the aspect of doping type; the short-circuit region and the collector region are isolated; the collector is formed at one side, departing from the drift region, of the collector region; the insulator covers the collector between the collector region and the short-circuit region; and the surface, departing from the drift region, of the insulator is contacted with the surface of the collector between the collector region and the short-circuit region, the surface, facing the drift region, of the insulator is contacted with the surface of the drift region, and the insulator is contacted with the collector region and the short-circuit region. The transmission path of electron current which is transmitted from a portion above the collector region to the short-circuit region in the back side structure is from the portion above the collector, via a portion above the insulator, to a portion above the short-circuit region, and the resistance of the electron transmission path is large, so that the collector region of a small size is used for completely inhibiting a rebound phenomenon, and the anti-short-circuit capability and the power cycling capability of a device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, to a collector structure of a semiconductor device and a TI-IGBT. Background technique [0002] TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor, triple mode integrated insulated gate bipolar transistor) is a traditional VDMOS (Vertical Double Diffused MetalOxide Semiconductor Field Effect Transistor, vertical double diffused metal oxide semiconductor field effect transistor ), IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and FRD (FastRecovery Diode, fast recovery diode) are semiconductor devices that integrate the structures and functions of the three devices into one. [0003] Taking N-channel TI-IGBT as an example, the structure of TI-IGBT is as follows figure 1 As shown, it includes: the opposite MOS (Metal Oxide Semiconductor, Metal Oxide Semiconductor) structure 11 and the collector structure 13, and the N between...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L29/739
Inventor 张文亮朱阳军滕渊
Owner SHANGHAI LIANXING ELECTRONICS