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Germanium-tin mid-infrared LED device induced by silicon nitride film and its preparation method

A technology of LED devices and silicon nitride films, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor light stability, high difficulty in doping high-tin components, low photoelectric conversion efficiency, etc., and overcome growth difficulties , simple processing, high photoelectric conversion efficiency

Active Publication Date: 2018-06-19
XIDIAN UNIV
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  • Abstract
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Problems solved by technology

[0008] The LED devices based on germanium-tin materials with various structures in the prior art currently have disadvantages such as high difficulty in doping high-tin components, low photoelectric conversion efficiency, and poor photostability, and still cannot meet the requirements of on-chip optoelectronic integrated systems for light sources. The invention provides a silicon nitride film-induced germanium-tin mid-infrared LED device and a preparation method thereof

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  • Germanium-tin mid-infrared LED device induced by silicon nitride film and its preparation method
  • Germanium-tin mid-infrared LED device induced by silicon nitride film and its preparation method
  • Germanium-tin mid-infrared LED device induced by silicon nitride film and its preparation method

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Embodiment Construction

[0031] In order to make the objects and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0032] Such as Figure 5 As shown, the embodiment of the present invention provides a silicon nitride film-induced germanium-tin mid-infrared LED device, including a silicon substrate and a germanium buffer layer arranged on the silicon substrate, and the germanium buffer layer is sequentially arranged from left to right An aluminum electrode, a lateral P-I-N germanium-tin layer, a silicon nitride layer and an aluminum electrode are provided, and a silicon nitride film is deposited on the germanium-tin P-I-N structure.

[0033] Such as Figure 1-5 As shown, the embodiment of the present invention provides a method for preparing a germanium-tin...

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Abstract

The invention discloses a silicon nitride membrane strained GeSn infrared LED device and a preparation method thereof. The infrared LED device comprises an Si substrate and a Ge buffer layer arranged on the silicon substrate, wherein the Ge buffer layer is successively provided with an aluminum electrode, a transverse P-I-N GeSn layer, a silicon nitride layer and an aluminum electrode from the left to the right, and a silicon nitride film is deposited above a GeSn P-I-N structure. According to the invention, the device and the method are compatible with a CMOS process, the problem of difficulty in growing a GeSn alloy with a high stannum ingredient content in the prior art is overcome, the stress size can be changed through adjusting the structure of a silicon nitride membrane so as to realize the demand of a GeSn material light source for different-wavelength light, the photoelectric conversion efficiency is quite high, the light stability is high, the processing is simple and convenient, and a concrete structure and a concrete implementation scheme are provided for realization of a light source on chip.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic device preparation, in particular to a silicon nitride film-induced germanium-tin mid-infrared LED device and a preparation method thereof. Background technique [0002] With the increasing technical requirements, the limit of the microfabrication of information processing hardware began to appear, which constrains the development of technology. In the past decades of development, microelectronics technology has been progressing according to Moore's law. The most notable feature of progress is that the size of the process is getting smaller and smaller, the degree of integration is getting higher and higher, and the cost is getting lower and lower. However, as the size of the microelectronics process advances to the nanometer level, the bottlenecks brought about by various physical effects are becoming more and more obvious. In order to break through the bottleneck, researchers have f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/34H01L33/44
CPCH01L33/0012H01L33/0054H01L33/34H01L33/44
Inventor 舒斌陈景明范林西吴继宝张鹤鸣宣荣喜胡辉勇宋建军王斌
Owner XIDIAN UNIV
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