Silicon nitride membrane strained GeSn infrared LED device and preparation method thereof

Abstract

The invention discloses a silicon nitride membrane strained GeSn infrared LED device and a preparation method thereof. The infrared LED device comprises an Si substrate and a Ge buffer layer arranged on the silicon substrate, wherein the Ge buffer layer is successively provided with an aluminum electrode, a transverse P-I-N GeSn layer, a silicon nitride layer and an aluminum electrode from the left to the right, and a silicon nitride film is deposited above a GeSn P-I-N structure. According to the invention, the device and the method are compatible with a CMOS process, the problem of difficulty in growing a GeSn alloy with a high stannum ingredient content in the prior art is overcome, the stress size can be changed through adjusting the structure of a silicon nitride membrane so as to realize the demand of a GeSn material light source for different-wavelength light, the photoelectric conversion efficiency is quite high, the light stability is high, the processing is simple and convenient, and a concrete structure and a concrete implementation scheme are provided for realization of a light source on chip.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic device preparation, in particular to a silicon nitride film-induced germanium-tin mid-infrared LED device and a preparation method thereof. Background technique [0002] With the increasing technical requirements, the limit of the microfabrication of information processing hardware began to appear, which constrains the development of technology. In the past decades of development, microelectronics technology has been progressing according to Moore's law. The most notable feature of progress is that the size of the process is getting smaller and smaller, the degree of integration is getting higher and higher, and the cost is getting lower and lower. However, as the size of the microelectronics process advances to the nanometer level, the bottlenecks brought about by various physical effects are becoming more and more obvious. In order to break through the bottleneck, researchers have f...

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Problems solved by technology

[0008] The LED devices based on germanium-tin materials with various structures in the prior art currently have disadvantages such as high difficulty in doping high-tin components, low photoelectric conversion efficiency, and poor photostability, and still cannot meet the requirements of on-chip optoelectronic integrated systems for light sources. The invention provides a silicon nitride film-induced germanium-tin mid-infrared LED device and a preparation method thereof

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