Wide-spectrum laser of a quantum well structure

Abstract

The invention discloses a quantum well laser capable of presenting wide spectrum characteristics, and belongs to the field of semiconductor photoelectrons. The laser in the invention comprises an N type electrode, an N type substrate, an N type buffer layer, a first N type heavily doped layer, a first undoped active region, a second N type heavily doped layer, a second undoped active region, a P type heavily doped layer, a P type contact layer and P type electrode which are stacked in sequence. The wide-spectrum laser in the invention introduces a heterojunction between the two active regions, wherein the heterojunction is formed by a heavily doped N layer and an intrinsically doped P layer. Thus a wide-spectrum laser whose active regions are quantum wells can be realized.

Description

technical field [0001] The invention relates to a wide-spectrum laser with quantum well structure, and the device can realize the wide-spectrum laser in the quantum well active area. Background technique [0002] Broad-spectrum light sources have important applications in optical fiber communication, detection and sensing, spectroscopy and biomedical imaging, so the research on broadband light sources has become one of the hot research directions. [0003] The earliest broadband light source was realized through a complex filtering system, but this system required an external high-power laser as a pump light source, which was bulky, expensive, and inconvenient to apply. [0004] The recent practice of broad-spectrum light sources is usually achieved by outputting a wide spectrum from a single laser, that is, a broadband laser. Broad-spectrum lasers can be divided into spontaneous emission broad-spectrum lasers and machine-induced emission broad-spectrum lasers according to ...

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Problems solved by technology

However, this kind of quantum dot and quantum pulse broadband laser has high requirements on the design of the active region, and it is difficult to realize and has poor repeatability.

In addition, materials for quantum dots and quantum pulse broadband lasers need to be grown by molecular beam epitaxy, which also limits their large-scale and large-scale growth.

[0005] Compared with quantum dot lasers and quantum pulse lasers, quantum well lasers have relatively poor photoelectric performance, such as low gain, high threshold current density, low modulation rate and low temperature stability, etc.

Therefore, the research on using quantum well laser as a broadband light source has not made the latest progress.

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