Semiconductor memory device and method of fabricating the same

A memory and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems affecting the integration density of conventional 2D memory devices and the limited integration density of 2D memory devices.

Active Publication Date: 2015-11-11
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

Therefore, techniques for forming fine patterns can greatly affect the integration density of conventional 2D memory devices
However, the integration den

Method used

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  • Semiconductor memory device and method of fabricating the same
  • Semiconductor memory device and method of fabricating the same
  • Semiconductor memory device and method of fabricating the same

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Embodiment Construction

[0032] Now, the inventive concept will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. Advantages and features of the inventive concepts and methods of realizing them will be apparent from the exemplary embodiments which will be described in more detail below with reference to the accompanying drawings. It should be noted, however, that the inventive concept is not limited to the following exemplary embodiments, and may be implemented in various forms. Therefore, the exemplary embodiments are provided only for disclosing the inventive concept and making the category of the inventive concept known to those skilled in the art. In the drawings, embodiments of the inventive concept are not limited to the specific examples provided herein and are exaggerated for clarity.

[0033]The terminology used herein is for the purpose of describing particular embodiments only and is not inten...

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Abstract

Semiconductor memory devices and methods of fabricating the same are provided. A semiconductor memory device includes stack gate structures that are spaced apart from each other in a first direction horizontal to a substrate. Each of the stack gate structures includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. Vertical channel structures penetrate the stack gate structures. A source plug line is provided between the stack gate structures. The source plug line is in contact with the substrate and extends in a second direction intersecting the first direction. The substrate being in contact with the source plug line includes a plurality of protruding regions formed along the second direction. Each of the protruding regions has a first width, and the protruding regions are spaced apart from each other by a first distance greater than the first width.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2014-0053601 filed with the Korean Intellectual Property Office on May 2, 2014, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The inventive concept relates to a semiconductor memory device and a method of manufacturing the same. More particularly, the inventive concepts relate to three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same. Background technique [0004] Semiconductor devices are becoming more highly integrated to provide high performance and low cost. The integration density of a semiconductor memory device directly affects the cost of the semiconductor memory device, resulting in a demand for highly integrated semiconductor devices. The integration level of a conventional two-dimensional (2D) or planar memory device is mainly determined by the ar...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L21/8247
CPCH01L29/66833H01L29/7926H10B43/35H10B43/10H10B43/27H01L29/7831H01L29/4234
Inventor 李俊熙朴镇泽
Owner SAMSUNG ELECTRONICS CO LTD
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