A color pixel structure of a micro display chip
A technology of pixel structure and miniature display, applied in instruments, semiconductor devices, electrical components, etc., can solve the problems of insufficient brightness, inability to use high-brightness display devices, etc., to achieve small performance changes, low thermal resistance, and high quality tolerance. Effect
Active Publication Date: 2019-04-23
深圳市向阳新能源科技有限公司
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Problems solved by technology
[0007] Silicon-based CMOS as a pixel drive circuit has been applied to silicon-based liquid crystal (Lcos) and silicon-based OLED, which is an effective way to realize the driving of small and micro bottom-emitting display chips, but silicon-based coms as a pixel drive circuit is not currently suitable for inorganic light-emitting diode displays. chip application
Moreover, in the prior art, OLED small and micro-sized display chips have insufficient brightness and cannot be used as high-brightness display devices.
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[0030] This embodiment discloses a color pixel structure of a micro display chip. The color pixel structure includes from bottom to top: a driving circuit layer 1, a display chip module and a color filter layer, wherein the driving circuit layer 1 is silicon Coms-based circuit, the driving circuit layer 1 is provided with a pixel driving circuit connection layer 2; the display chip module includes three display chip units with the same structure, and the display chip units are flip-chip GaN light-emitting diodes; The color filter layer is a red filter adhesive layer 15, a green filter adhesive layer 16, and a blue filter adhesive layer 17, which are arranged on the upper part of the display chip unit by glue coating and photolithography, and the red, green, and blue The light in the wavelength band has a high-transmittance filter adhesive layer to obtain a three-primary color light source, and then combine the three primary colors to achieve color display and obtain a high-effi...
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Abstract
The invention belongs to the LED processing field and especially relates to a color pixel structure of a micro display chip. The color pixel structure successively comprises a driving circuit layer, a display chip module and a color filter layer from bottom to top. The display chip module comprises several display chip units with a same structure. Each display chip unit is an inverted GaN light emitting diode. The GaN light emitting diode is taken as a display chip of a pixel light source and is easily used as a highlight brightness display device. Because of a high luminous intensity of the GaN light emitting diode, quality tolerance to an electrode interface connected to an inverted electrode is high and a wide technology window is easily obtained. Because of an active layer, an inverted structure is closer to a substrate and low thermal resistance is possessed. Through the above characteristic, during a process from lightening to thermostabilization, a performance change amplitude of the display chip is small.
Description
technical field [0001] The invention belongs to the field of LED processing, and in particular relates to a color pixel structure of an LED-based micro display chip. Background technique [0002] GaN inorganic light-emitting diodes (LEDs) have the characteristics of long life, low power consumption, high brightness, high and low temperature resistance, and good radiation resistance. They are high-quality light sources for display pixels. [0003] The base material and epitaxial layer of GaN inorganic light-emitting diodes are mainly grown on sapphire substrates. Sapphire substrates have the advantages of mature production technology, good device quality, good stability, and can be used in high-temperature growth processes, and sapphire has high mechanical strength. Easy to handle and wash. [0004] GaN blue light LED light source excites yellow phosphor powder, and white light is synthesized by LED blue light and yellow-green light emitted by phosphor powder. It is a widely...
Claims
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IPC IPC(8): H01L27/15G02F1/015
Inventor 吴其松
Owner 深圳市向阳新能源科技有限公司