Graphene-based spatial electro-optic modulator

Abstract

The invention discloses a space electrooptical modulator based on graphene, and relates to an electrooptical modulator. The space electrooptical modulator adopts a five-layer structure and is provided with an upper silver layer, an upper hexagonal boron nitride layer, a graphene single-atom layer, a lower hexagonal boron nitride layer and a lower silver layer in sequence from top to bottom, wherein at least one slit is formed in the upper silver layer; the upper silver layer, the upper hexagonal boron nitride layer, the graphene single-atom layer, the lower hexagonal boron nitride layer and the lower silver layer are 200-300nm in length and 140-170nm in width; the upper silver layer is 10-30nm in thickness; the slits are 5-20nm in width; the upper hexagonal boron nitride layer is 1nm in thickness; the graphene single-atom layer is 0.3-0.8nm in thickness; the lower hexagonal boron nitride layer is 15-50nm in thickness; the lower silver layer is 100-2,000nm in thickness; the total thickness is 126.3-281.8nm. The space electrooptical modulator is small in size, low in operation voltage, high in modulation speed and wide in working frequency band.

Description

technical field [0001] The invention relates to an electro-optic modulator, in particular to a graphene-based spatial electro-optic modulator. Background technique [0002] In recent years, integrated high-speed, small-size, and broadband optical modulators have been a research hotspot in academia and even in industry, especially the traditional electro-optic modulators made of semiconductors. However, modulators based on silicon have a large size on the order of millimeters due to their weak electro-optical interaction characteristics; modulators based on germanium or compound semiconductors face compatibility issues with existing silicon optoelectronic platforms. question. Adding an optical resonant cavity with a high quality factor in a silicon modulator can enhance the modulation intensity, but these devices have a narrow modulation bandwidth due to the characteristics of the resonant cavity itself and require a high manufacturing process and a harsh ambient temperature...

AI Technical Summary

Problems solved by technology

However, the disadvantage of the waveguide structure is that in order to achieve a large modulation depth, the waveguide must be long enough to enhance the interaction between graphene and the light field, which will increase the equivalent capacitance of the waveguide, thereby limiting the modulation speed. At the same time, there will be relatively high electromagnetic losses

Images