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Inductive wiring structure of indium tin oxide layer

A technology of indium tin oxide and wiring structure, applied in the input/output process of data processing, instruments, electrical digital data processing, etc., can solve the problems of weak graphics display ability, low sensitivity, low signal-to-noise ratio, etc., to achieve Reduce attenuation, enhance the overall signal-to-noise ratio, and enhance the effect of inter-coupling capacitance

Active Publication Date: 2018-01-30
WUHAN JINGCE ELECTRONICS GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The standard diamond-shaped ITO pattern is a classic pattern structure of the SensingITO layer (sensing indium tin oxide layer) of the touch panel, but its signal-to-noise ratio is low, and the ability to suppress some special optical refraction to cause the pattern to appear is weak. In addition, for Low sensitivity for touch operations suspended off the ground

Method used

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  • Inductive wiring structure of indium tin oxide layer
  • Inductive wiring structure of indium tin oxide layer
  • Inductive wiring structure of indium tin oxide layer

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Embodiment Construction

[0015] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0016] Such as figure 1 As shown, the present invention discloses a sensing indium tin oxide layer applied to a touch screen, which includes a plurality of sensing indium tin oxide subunits (1.1) arranged side by side or side by side, wherein each sensing indium tin oxide The subunits (1.1) all include a first touch sensing area (1.2) and a second touch sensing area (1.3) perpendicular to each other; the first touch sensing area (1.2) and the second touch sensing area (1.3) ) each includes a first touch sensing sub-region (1.4) and a second touch sensing sub-region (1.5) connected to each other, and the first touch sensing sub-region (1.4) and the second touch sensing sub-region (1.5 ) are symmetrical to each other.

[0017] In the above technical solution, the first touch sensing sub-region (1.4) and the second touch sensing sub-region (1.5) ...

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Abstract

The invention discloses a routing architectur of an inductive indium tin oxide (ITO) layer. The wiring structure comprises a plurality of inductive ITO subunits arranged side by side or in parallel, wherein each inductive ITO subunit comprises a first touch induction region and a second touch induction region which are perpendicular to each other; and each of the first touch induction region and the second touch induction region comprises a first touch induction sub-region and a second touch induction sub-region which are communicated with each other. According to the routing structure, the probability of graphic display caused by optical refraction is reduced by changing a refraction angle of a rhombus ITO graph, and meanwhile a large amount of independent ITO blocks are adopted for increasing coupling capacitance and reducing impedance, so that the signal-noise ratio can be greatly increased and the suspended induction sensitivity can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of touch screen design, in particular to a wiring structure for inductive indium tin oxide layer. Background technique [0002] Due to its excellent conductivity and transparency, ITO (Indium tin oxide) has been widely used in display panels such as liquid crystal panels and touch screens. [0003] The standard diamond-shaped ITO pattern is a classic pattern structure of the SensingITO layer (sensing indium tin oxide layer) of the touch panel, but its signal-to-noise ratio is low, and the ability to suppress some special optical refraction to cause the pattern to appear is weak. In addition, for The sensitivity of the touch operation is lower when it is suspended from the ground. Contents of the invention [0004] The purpose of the present invention is to provide a wiring structure for inductive indium tin oxide layer, by changing the refraction angle of the diamond-shaped ITO pattern to reduce the proba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/044
Inventor 游健超
Owner WUHAN JINGCE ELECTRONICS GRP CO LTD
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