Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A wiring structure for inductive indium tin oxide layer

An indium tin oxide, wiring structure technology, applied in the input/output process of data processing, instruments, electrical digital data processing and other directions, can solve the problems of low sensitivity, low signal-to-noise ratio, weak graphics display ability, etc. Enhance the overall signal-to-noise ratio, enhance the inter-coupling capacitance, and reduce the effect of attenuation

Active Publication Date: 2018-01-30
WUHAN JINGCE ELECTRONICS GRP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The standard diamond-shaped ITO pattern is a classic pattern structure of the SensingITO layer (sensing indium tin oxide layer) of the touch panel, but its signal-to-noise ratio is low, and the ability to suppress some special optical refraction to cause the pattern to appear is weak. In addition, for Low sensitivity for touch operations suspended off the ground

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A wiring structure for inductive indium tin oxide layer
  • A wiring structure for inductive indium tin oxide layer
  • A wiring structure for inductive indium tin oxide layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0016] like figure 1 As shown, the present invention discloses a sensing indium tin oxide layer applied to a touch screen, which includes a plurality of sensing indium tin oxide subunits (1.1) arranged side by side or side by side, wherein each sensing indium tin oxide The subunits (1.1) all include a first touch sensing area (1.2) and a second touch sensing area (1.3) perpendicular to each other; the first touch sensing area (1.2) and the second touch sensing area (1.3) ) each includes a first touch sensing sub-region (1.4) and a second touch sensing sub-region (1.5) connected to each other, and the first touch sensing sub-region (1.4) and the second touch sensing sub-region (1.5 ) are symmetrical to each other.

[0017] In the above technical solution, the first touch sensing sub-region (1.4) and the second touch sensing sub-region (1.5) bot...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wiring structure of an inductive indium tin oxide layer, which comprises a plurality of inductive indium tin oxide subunits arranged side by side or side by side, and each inductive indium tin oxide subunit includes mutually perpendicular first A touch sensing area and a second touch sensing area; the first touch sensing area and the second touch sensing area both include a first touch sensing sub-area and a second touch sensing sub-area connected to each other. The invention reduces the probability of optical refraction causing graphics to appear by changing the refraction angle of the diamond-shaped ITO graphics, and at the same time uses a large number of independent ITO blocks to enhance coupling capacitance and reduce impedance, which can greatly improve the signal-to-noise ratio and the sensitivity of suspension induction.

Description

technical field [0001] The invention relates to the technical field of touch screen design, in particular to a wiring structure for inductive indium tin oxide layer. Background technique [0002] Due to its excellent conductivity and transparency, ITO (Indium tin oxide) has been widely used in display panels such as liquid crystal panels and touch screens. [0003] The standard diamond-shaped ITO pattern is a classic pattern structure of the SensingITO layer (sensing indium tin oxide layer) of the touch panel, but its signal-to-noise ratio is low, and the ability to suppress some special optical refraction to cause the pattern to appear is weak. In addition, for The sensitivity of the touch operation is lower when it is suspended from the ground. Contents of the invention [0004] The purpose of the present invention is to provide a wiring structure for inductive indium tin oxide layer, by changing the refraction angle of the diamond-shaped ITO pattern to reduce the proba...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/044
Inventor 游健超
Owner WUHAN JINGCE ELECTRONICS GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com