The invention discloses a manufacture method of a low-attenuation white light LED, which comprises the following steps of (1), fixing a blue wafer in a base of a bracket, welding a line; (2), firstly adding inorganic filler in a main agent of silicon gel, uniformly stirring, then adding a curing agent to be uniformly mixed with the inorganic filler; (3), adding yellow fluorescent powder in the silicon gel containing two components, uniformly stirring and coating on the blue wafer to form a first coating layer, baking and curing;(4), adding a nano inorganic filler in a mixture of the silicon gel and epoxy glue, uniformly stirring, coating on the first coating layer to form a second coating layer, baking and curing; and (5), packing the periphery of the base by using the epoxy glue. A stress buffer layer is additionally arranged between the first coating layer and the externally packed epoxy glue, thereby changing the refraction angle of the light, reducing the reflection ratio of the light and the attenuation of the light, improving the light extraction efficiency of the white light LED, greatly improving the attenuation property of the product and ensuring the reliability of the product.