The invention discloses a manufacture method of a low-attenuation
white light LED, which comprises the following steps of (1), fixing a blue
wafer in a base of a bracket,
welding a line; (2), firstly adding
inorganic filler in a main agent of
silicon gel, uniformly stirring, then adding a curing agent to be uniformly mixed with the
inorganic filler; (3), adding yellow fluorescent
powder in the
silicon gel containing two components, uniformly stirring and
coating on the blue
wafer to form a first
coating layer, baking and curing;(4), adding a nano
inorganic filler in a mixture of the
silicon gel and
epoxy glue, uniformly stirring,
coating on the first coating layer to form a second coating layer, baking and curing; and (5), packing the periphery of the base by using the
epoxy glue. A stress buffer layer is additionally arranged between the first coating layer and the externally packed
epoxy glue, thereby changing the
refraction angle of the light, reducing the reflection ratio of the light and the attenuation of the light, improving the light extraction efficiency of the
white light LED, greatly improving the attenuation property of the product and ensuring the reliability of the product.