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Device for protecting an electrode seal in a reactor for the deposition of polycrystalline silicon

A reactor, polysilicon technology, used in chemical methods, circuits, discharge tubes, etc. to react gases with non-granular solids, and can solve problems such as failure to reach final diameter, system output decline, ground faults, etc.

Inactive Publication Date: 2015-11-18
WACKER CHEM GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In the devices of WO2011092276A1 and US20130011581A1, although the seal between the electrode holder and the base plate is thermally protected, a ground fault may occur
Short circuit such that current is no longer supplied to the rod heating, resulting in an abrupt termination of the process
Rod does not reach desired final diameter
Thinner rods result in lower system throughput, resulting in higher costs

Method used

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  • Device for protecting an electrode seal in a reactor for the deposition of polycrystalline silicon
  • Device for protecting an electrode seal in a reactor for the deposition of polycrystalline silicon
  • Device for protecting an electrode seal in a reactor for the deposition of polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0069] Figure 3a A second preferred embodiment is shown.

[0070] Here, at least one cover 6 is provided, which contacts the electrode holder 1 and the base plate 3 .

[0071] The cover 6 surrounds the sealing body 2 by radially surrounding it.

[0072] The cover 6 must consist of an electrically insulating material with very good thermal conductivity. Silicification of the cap 6 is therefore not possible.

[0073] For this purpose, silicon nitride and aluminum nitride can be used, or have a high thermal conductivity of greater than 10 W / mK at room temperature, preferably greater than 50 W / mK, particularly preferably greater than 150 W / mK and have a temperature of greater than 10 W / mK at room temperature. 9 Ωcm, preferably greater than 10 11 Other ceramic materials with a resistivity of Ωcm.

[0074] In order to increase the heat dissipation of the cover 6, the cover 6 may preferably be firmly connected with the cooled electrode holder 1, for example, connected by thread...

Embodiment 1

[0151] Example 1 (according to the first preferred embodiment)

[0152] A mantle of ultrapure graphite was placed on the electrode holder. In order to protect the sealing body, a translucent quartz ring is placed around the electrode holder at a distance of 10 mm. The size of the cover disk is such that it protects the electrode holder and at least the area of ​​the floor with the quartz ring on it. Due to the high gas space temperature, the quartz ring and the mantle are silicided by the thin silicon layer during deposition. The size of the surrounding gap between the mantle and the quartz ring is such that spark breakdown does not occur from the mantle to the quartz ring under the applied voltage.

[0153] Out of 100 lots, 5 lots failed due to ground fault. Individual silicon fragments reach the electrode holder through the surrounding gap, causing a ground fault between the electrode holder and the base plate.

[0154] Due to the additional protection of the cover plate...

Embodiment 2

[0155] Example 2 (according to the second preferred embodiment)

[0156] The electrode holder and the sealing body are protected by applying a cover made of aluminum nitride. In this embodiment, the cover is in contact with the electrode holder above and with the cylindrical portion of the electrode holder, and reaches the bottom plate. Due to the high thermal conductivity of 180 W / mK (at room temperature), as well as the heat dissipation of the heat absorbed by the reaction gas and the heat conduction through the cooled contact surface, the surface temperature is so low that silicide does not occur on the cover surface. Furthermore, the material of the cover is an electrically insulating material. Due to the complete encapsulation of the seal, ground faults caused by silicon fragments cannot occur. Therefore, 100 batches have a ground fault rate of 0%. Due to the lower cover temperature, the service life of the seal is increased to 9 months.

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PUM

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Abstract

The invention relates to a device for protecting an electrode seal in a reactor for polycrystalline silicon deposition, a sealing element (2) being arranged in a space between the electrode retainer (1) of the electrode and the base plate (3) of the reactor, and a protective ring (4) being provided that radially encloses said electrode retainer (1) and sealing element (2) and touches the base plate, or a cover (6) being provided that radially encloses the electrode retainer (1) and sealing element (2) and touches the electrode retainer (1), provided that if no further protective elements, aside from said protective ring (4), are present that radially enclose the electrode retainer (1) and sealing element (2) or touch the electrode retainer, said one-part or multi-part protective ring (4) laterally touches the electrode retainer (1) and consists of an electrically-insulating material that has a specific electric resistance of greater than 109 Ωcm at room temperature while simultaneously having a specific thermal conductivity of greater than 10 W / mK at room temperature.

Description

technical field [0001] The invention relates to devices for protecting electrode seals in reactors for the deposition of polysilicon. Background technique [0002] High-purity silicon is generally produced by the Siemens method. In this case, a reaction gas containing hydrogen and one or more silicon-containing components is passed into a reactor comprising a support heated by means of a direct current on which Si is deposited in solid form. As silicon-containing compounds, preferably silanes (SiH 4 ), monochlorosilane (SiH 3 Cl), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), tetrachlorosilane (SiCl 4 ) or a mixture thereof. [0003] Each carrier typically consists of two filamentary rods and a bridge that typically connects the free ends of adjacent rods. In most cases the wire rods are made of monocrystalline or polycrystalline silicon, in a few cases metals or alloys or carbon are used. Insert the wire rod vertically into the electrode at the bottom o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J15/00C01B33/035H01J37/32
CPCB01J19/0073B01J19/087B01J2219/0807B01J2219/0837B01J2219/0875C01B33/035H01J37/32477H01J37/32513Y02P20/149Y02P20/141C23C16/24
Inventor H·克劳斯A·黑根C·库察
Owner WACKER CHEM GMBH