Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method of Preparing and Using Photosensitive Material

A photosensitive layer and additional material technology, applied in the field of preparation and use of photosensitive materials

Active Publication Date: 2015-11-25
TAIWAN SEMICON MFG CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the resolution improvements provided by RET components such as scattering strips pose other challenges
For example, as photosensitive materials become more sensitive to meet current radiation sources, this sensitivity can cause problems for undesirably printing RET components onto target substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of Preparing and Using Photosensitive Material
  • Method of Preparing and Using Photosensitive Material
  • Method of Preparing and Using Photosensitive Material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided in one embodiment is a method that includes selecting a photoresist that is one of a positive-tone photoresist and a negative-tone photoresist. A first additive or a second additive is selected based on the photoresist. The first additive has a fluorine component and a base component attached to a polymer and is selected if the a positive-tone resist is provided. The second additive has the fluorine component and an acid component attached to the polymer and is selected with a negative-tone resist is provided. The selected photoresist and the selected additive material are applied to a target substrate.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation of US Application Serial No. 61 / 988,691 filed May 5, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to integrated circuit devices and, more particularly, to methods of making and using photosensitive materials. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials, design, and manufacturing tools have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. During these advances, manufacturing methods, tools, and materials have all struggled to realize the desire for smaller component sizes. [0005] Photolithography is a mechanism for projecting patterns onto a substrate, such as a semiconductor wafer, having a photosensitive layer formed thereon....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/039G03F7/30G03F7/322G03F7/0045G03F7/0046G03F7/0382G03F7/0392G03F7/11G03F7/2041
Inventor 訾安仁吴振豪张庆裕
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More