Simulation model of high voltage device and modeling method for simulation model of high voltage device

Abstract

A high-voltage device simulation model and a modeling method therefor. The simulation model comprises: a core transistor (101), a drain end resistor (102) and a source end resistor (103), wherein a first end of the drain end resistor (102) is electrically connected to a drain (d1) of the core transistor (101) and a second end of the drain end resistor (102) serves as the drain of a high voltage device; a first end of the source end resistor (103) is electrically connected to a source (s1) of the core transistor (101) and a second end of the source end resistor (103) serves as the source of the high voltage device. The relations of the resistance value of the drain end resistor (102) are as follows: RD＝(RD0 / W)*(1+CRD*VD ERDD+1 / (1+PRWDD*VDERDD))*TFAC_RD, and TFAC_RD＝(1+TCRD1*(TEMP-25)+TCRD2*(TEMP-25)*(TEMP-25)).

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a simulation model of a high-voltage device and a modeling method of the simulation model of the high-voltage device. Background technique [0002] In recent years, high-voltage devices are more and more widely used in integrated circuit products, for example, they can be used in circuits such as power management chips. With the wide application of high-voltage devices, the accuracy requirements of high-voltage device simulation models in integrated circuit design are also getting higher and higher. The special structure of high-voltage devices determines that these devices have more parasitic effects, such as the typical quasi-saturation effect. The quasi-saturation effect means that when the gate voltage increases, compared with ordinary MOSFET transistors, the saturation current increase speed of high-voltage transistor devices is significantly reduced, that is, the control...

AI Technical Summary

Problems solved by technology

As a result, the most widely used standard models in the industry, BSIM3 and BSIM4, cannot fit this high-voltage characteristic well

Current simulation models for high-voltage devices are costly, inefficient, time-consuming, and inaccurate

Especially for ultra-high voltage devices with a drain-source voltage of more than 700V, the current simulation model is difficult to meet the simulation accuracy requirements

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