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A back contact perovskite solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of poor stability, restricted practicality, low conversion efficiency of perovskite cells, etc., and achieve the effect of improving conversion efficiency and reducing shading loss

Active Publication Date: 2017-07-28
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes the conversion efficiency of perovskite cells not very high and the stability is very poor, which seriously restricts its practicality.

Method used

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  • A back contact perovskite solar cell

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Embodiment 1

[0024] 1) Substrate 1 is made of FTO transparent conductive glass, and its sheet resistance is ~15Ω / □

[0025] 2) Electron transport layer 2 is made of magnetron sputtered ZnO with a thickness of ~100nm, heat-treated at 400°C and N2 atmosphere for 1h

[0026] 3) The original diameter of the PS beads used is 2um, and the monodisperse layer PS beads are laid by the liquid surface monodisperse layer transfer method, and the monodisperse layer PS beads have a hexagonal close-packed structure.

[0027] 4) Use RIE dry etching to reduce the diameter of PS pellets to 1um

[0028] 5) Al2O3 is prepared by ALD method for the dielectric layer 3, with a thickness of ~50nm

[0029] 6) The metal layer 4 is made of magnetron sputtering Au, with a thickness of ~40nm

[0030] 7) Use toluene ultrasonic to peel off the Al2O3 and Au on the PS ball and its top to form a mesh structure of Al2O3 and Au. The mesh period length is 2um, the mesh diameter is ~1um, and the mesh is also arranged in a hex...

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Abstract

The invention discloses a back-contact perovskite solar cell, comprising a bottom-to-top structure: 1) a conductive substrate; 2) a uniform electron transport layer; 3) a dielectric layer; 4) a metal layer; 5) a perovskite layer And there are several holes through the dielectric layer and the metal layer to contact the electron transport layer; 6) the protective layer of the perovskite layer; the conductive substrate adopts various TCO transparent conductive glass, heavily doped crystalline silicon wafers, and metal flakes; The electron transport layer adopts ZnO, TiO2, PCBM; the thickness is generally 10nm~10um; the dielectric layer adopts Al2O3, SiO2, SiNx, the thickness is 10nm~2um; the metal layer adopts Au, Pt, Ag, Al; the thickness is 10nm~2um; The diameter of the channel is 0.5~1.5um. The perovskite layer is made of organometallic halide semiconductor perovskite materials such as MAPbI3; the thickness is 100nm to 20um. The protective layer uses a hydrophobic anti-oxidative polymer. In order to effectively maintain the performance of the perovskite material and improve the stability of the battery; the use of the back contact structure can effectively reduce the shading loss of the front electrode and improve the conversion efficiency of the battery.

Description

technical field [0001] The invention relates to a solar cell, in particular to a back contact perovskite solar cell. [0002] technical background [0003] After years of development, the performance and conversion efficiency of traditional crystalline silicon solar cells, silicon-based thin-film solar cells, and III-V compound solar cells have approached the limit, and the space for reducing manufacturing costs is also very limited. [0004] Many research institutions around the world are looking for new materials and new technical solutions. In recent years, organic / inorganic solar cells have attracted much attention and research, and the conversion efficiency of organic compound solar cells has a strong upward trend. In particular, organometal halide perovskite cells, with their novel photovoltaic mechanism, suitable bandgap width, low material cost, and easy manufacturing process, are expected to greatly improve conversion efficiency and reduce manufacturing costs, and h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/10H10K30/81H10K30/88Y02E10/549
Inventor 余林蔚李成栋童国庆王军转徐骏徐岭
Owner NANJING UNIV
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