A port transfer device for a multi-layer SIW filter with ports in the same direction

Abstract

A port transfer device for a multi-layer SIW filter with ports in the same direction, including a multi-layer SIW filter, a microstrip line drawn from the first port, a microstrip line drawn from the second port, a microstrip line diverted from the first port, a second port The port turns to the microstrip line; the first port draws the microstrip line to be connected to a port of the multilayer SIW filter, and the first port turns to the microstrip line and the first port draws the microstrip line vertically, so that one port of the filter is drawn out and Turn to the first port and turn to the microstrip line plane; the second port leads the microstrip line to connect with the other port of the multilayer SIW filter, and the second port turns to the microstrip line and the second port leads the microstrip line perpendicular to the filter The other port is drawn out and turned to the second port to turn to the microstrip line plane; the first port to turn to the microstrip line and the second port to turn to the microstrip line are located on the same plane and the bottom is the same ground metal plate. The switching device of the invention enables the multi-layer SIW filter to be applicable to various test platforms, and facilitates the test and use of the filter.

Description

technical field [0001] The invention belongs to the field of microwave and millimeter wave technologies, and in particular relates to a port switching device of a multi-layer SIW filter with ports in the same direction. Background technique [0002] With the rapid development of radar and satellite fields, certain requirements are put forward for high power, miniaturization and integration of devices. Substrate-integrated waveguide (SIW) devices combine the advantages of miniaturization of microstrip devices and high power of waveguide devices. High-power microwave devices based on substrate-integrated waveguides have both miniaturization and high-power characteristics, and are widely used in Microwave integrated system. [0003] Traditional substrate-integrated waveguide microwave devices have a single-layer structure. With the demand for device miniaturization, multi-layer substrate-integrated waveguide microwave devices are designed to meet the requirements of microwave ...

AI Technical Summary

Problems solved by technology

However, at present, the ports of SIW multilayer microwave devices are usually on different dielectric substrate layers and are located in the same direction, that is, multilayer microwave devices with ports in the same layer; the packaging and testing of multilayer microwave devices with this structure are difficult and greatly limit its use

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