IGBT Health Monitoring Method Based on Collector Leakage Current

Abstract

The invention provides a method for monitoring the health state of the IGBT collector leakage current, which comprises the following steps: firstly, after the IGBT module has been installed and debugged and put into use, the collector leakage current is tested under certain conditions and recorded as the initial value ; Regularly test the collector leakage current of the IGBT device and record it as the test value; bring the test value into the simulation model of the health status monitoring method of the collector leakage current, and then calculate the fatigue aging process and remaining life of the IGBT device, so as to achieve the purpose of monitoring the IGBT The purpose of the healthy state; when the deviation of the collector leakage current reaches the failure standard, it is determined that the device has failed. At this time, the IGBT device needs to be replaced, and the above steps are repeated. The invention can effectively evaluate the health state and reliability of the IGBT devices in different life stages through initial state calibration and real-time monitoring.

Description

technical field [0001] The invention belongs to the technical field of reliability of power electronic devices and devices, in particular to an IGBT health state monitoring method based on collector leakage current. Background technique [0002] Insulated gate bipolar transistor (IGBT) is the core component of power electronic devices, and its reliability has become the most important factor in determining the safe operation of the entire device. Overseas research institutes have investigated more than 200 products from 80 companies and found that nearly 40% of power electronic device failures are caused by component failures. With the wide application of IGBT devices in military and economic fields such as aerospace, electromagnetic launch, maritime transportation, rail transit, and new energy power generation, the power level is getting higher and higher, the working environment is harsher, and the use conditions are increasingly harsh. increasingly stringent requirements...

AI Technical Summary

Problems solved by technology

During the deposition and alloying process of Al, and when the device is subjected to a strong current impact (this strong current can come from various electromagnetic interference, electrostatic discharge, super power aging and life experiments, etc.), the Al-Si interface occurs Si to Al Physical processes such as solid-state dissolution of Si, electromigration of Si in Al grain boundaries, thermoelectromigration of Al in Si, etc., lead to penetration pits in the Si contact window, which may cause the increase of the barrier height in light cases, or increase the leakage current in severe cases. PN junction short circuit

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