Calculation method of cutoff frequency of small signal model of graphene transistor

Abstract

A calculation method for the cut-off frequency of a small-signal model of a graphene transistor, comprising: forming a plurality of MOSFETs with graphene materials as active regions on a substrate, wherein a source-drain metal contact is formed on each active region; The cut-off frequency of each MOSFET; for the original small-signal model and the special properties of the contact capacitance between the graphene active region and the source-drain metal contact, the traditional small-signal model is modified to a new small-signal equivalent Model; based on the new small-signal equivalent model, using traditional circuit analysis methods, KCL and KVL analysis methods, the numerical solution of the new cut-off frequency is obtained; the numerical solution of the cut-off frequency is compared with the measured value of the cut-off frequency, and the feedback modification is small Signal equivalent model. The invention can accurately calculate and fit the cut-off frequency of the graphene transistor, and is suitable for high-frequency research of the graphene transistor. The invention has reasonable theory, accurate results, is simple and easy to implement, and is beneficial to establishing a complete small-signal simulation model of the graphene transistor.

Description

Technical field [0001] The invention relates to the technical field of modeling and simulation of semiconductor electronic devices, and in particular to a method for calculating the cut-off frequency of a small signal model improved for graphene transistors. Background technique [0002] As a typical two-dimensional material, graphene has received continuous attention from the scientific community. Graphene has excellent electrical, thermal and mechanical properties, such as up to 100000 cm at room temperature 2 / V·s carrier mobility, so that graphene can be used in touch panels, transparent conductive film and other fields. Graphene has a current density limit far greater than that of Cu, and can realize low-cost wires that can pass more current than Cu. In the field of devices, the manufacturing process of graphene transistors is becoming more and more perfect. In 2013, IBM produced the first graphene mixer integrated circuit. The application of graphene transistors is mainly...

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Problems solved by technology

For the contact characteristics of the device, foreign experts have completed the research on the contact characteristics and contact capacitance characteristics of graphene and metals, but there is no complete small-signal model that takes into account the influence of the contact capacitance and the perfect small-signal model for the cut-off frequency The impact of the calculation of

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