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Substrate processing equipment

A substrate processing and equipment technology, which is applied in the field of substrate processing equipment, can solve the problem of increased drift distance of particles 6, and achieve the effect of suppressing the generation of particles

Active Publication Date: 2017-08-08
SEMES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to processing tolerances, a gap 3 may be formed between the inner wall 1 and the inner liner 2 of the processing chamber, and the electric field 4 of the microwave and the processing gas 5 may enter the gap 3
In this way, the inner wall 1 of the processing chamber may be damaged by the plasma to generate particles 6
In addition, the flow of process gas 5 into the gap 3 will increase the drift distance of the particles 6, so that the particles 6 may reach the substrate

Method used

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  • Substrate processing equipment
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Embodiment Construction

[0016] The inventive concepts will now be described in detail with reference to the accompanying drawings, in which exemplary embodiments of the inventive concepts are shown. Advantages and features of the inventive concept and methods of achieving them will be apparent through the exemplary embodiments which will be described in detail hereinafter with reference to the accompanying drawings. It should be noted, however, that the inventive concept is not limited to the following exemplary embodiments, and it can also be implemented in other various forms. Therefore, the following exemplary embodiments are provided only to disclose the inventive concept and to make those skilled in the art understand the type of the inventive concept. In the drawings, embodiments of the inventive concept are not limited to the specific embodiments provided herein, which may be exaggerated for clarity.

[0017] The terminology used herein is for the purpose of describing particular embodiments ...

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Abstract

The inventive concept provides a substrate processing apparatus. The device includes a processing chamber, a substrate supporting unit, a gas supply unit, a microwave applying unit, an antenna plate, a slow wave plate, a dielectric plate, an exhaust baffle, and a lining. The liner includes: a body having an annular shape facing an inner side wall of the processing chamber; and a flange extending from the body into a wall of the processing chamber. The flange prevents the electric field of the microwaves and process gas from being supplied into the gap between the process chamber and the body. In this way, it is possible to suppress generation of particles due to plasma damage to the inner side wall of the processing chamber, and the drift distance of the particles can be reduced to suppress the particles from reaching the substrate.

Description

technical field [0001] The present inventive concept relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma. Background technique [0002] Plasmas are created by extremely high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. Plasma refers to an ionized gaseous substance composed of ions, electrons, and / or free radicals. In the manufacture of semiconductor devices, various processes can be performed using plasma. For example, the etching process may be performed by causing ion particles contained in the plasma to collide with the substrate. [0003] figure 1 It is a cross-sectional view showing the inner liner 2 and the inner side wall 1 of the processing chamber of a common substrate processing equipment that generates plasma by means of microwaves. see figure 1 A liner 2 is usually provided along the inner sidewall 1 of the processing chamber in order to protect t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32192H01J37/32477
Inventor 张龙守金宣来洪性焕
Owner SEMES CO LTD