Semiconductor device

Abstract

A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C[nF] and the total area of the lower ends of the coupling holes is represented by A[[mu]m2], the following expression (1) is satisfied. C / A<=1.98 [nF / [mu]m2] (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.

Description

[0001] Cross References to Related Applications [0002] The disclosure of Japanese Patent Application No. 2014-130052 filed on Jun. 25, 2014 including specification, drawings and abstract is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, for example, to a technique applicable to a semiconductor device having a capacitor. Background technique [0004] A capacitor is an electronic device that accumulates charge and is used in, for example, DRAM (Dynamic Random Access Memory). As for the capacitor, there are cases where a large capacitance is required. As the surface area of ​​the capacitor increases, the capacitance of the capacitor will become larger. Therefore, in order to obtain a capacitor having a large capacitance, the surface area of ​​the capacitor can be made large. [0005] Meanwhile, it is now desired that the area of ​​the semiconductor chip be small. In order to form a capaci...

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