power semiconductor module

A technology of power semiconductors and power electronics, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as multi-space

Active Publication Date: 2018-03-27
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, a lot of extra space is required in this structure for measuring the current through the additional current measuring structure

Method used

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Embodiment Construction

[0028] The same reference numerals denote the same or similar components respectively having the same or similar meanings in these drawings.

[0029] first according to figure 1 and figure 2 An example of a power semiconductor module 1 is outlined in the schematic diagram shown in . The module 1 comprises a power electronic substrate 20 having a first surface 201 and a second surface 202 opposite the first surface 201 . The power electronic substrate 20 comprises, for example, a dielectric insulation carrier, which is typically provided with an upper metallization and a lower metallization (both in figure 1 not shown). The insulating carrier serves to electrically insulate the upper metallization from the lower metallization. The power electronics substrate 20 can in particular be a DCB substrate (DCB=double copper bonded), a DAB substrate (DAB=double aluminum bonded) or an AMB substrate (AMB=active metal brazed), wherein the insulating carrier is usually made of Ceramic...

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Abstract

The invention relates to a power semiconductor module having a power electronic substrate comprising a first surface, a second surface opposite the first surface, a first long side and a second long side opposite the first long side. Furthermore, the power semiconductor module has a module frame which is arranged in such a way that it surrounds the power electronics substrate, at least one power connection which is arranged on the first long side and extends through the module frame is arranged at The other connection terminal at the second long side and extending through the module frame, at least one power semiconductor component, which is arranged on the first surface of the power electronic substrate and is electrically connected to the at least one power connection terminal, and has at least one A current sensor which is designed to measure the current in the power connection, the at least one current sensor being arranged on the power connection and having a signal output which is connected to the other connection.

Description

technical field [0001] The invention relates to the field of power semiconductor modules, in particular to power semiconductor modules with load current measurement at an external load connection. Background technique [0002] A power semiconductor module usually includes a power electronic substrate on which a plurality of power semiconductor components (such as semiconductor switches, such as a plurality of IGBTs (bipolar transistors with insulated gates, English: insulated gate bipolar transistors) are arranged Or multiple MOSFETs (Metal Oxide Semiconductor Field Effect Transistor, English: Metal Oxide Semiconductor Field Effect Transistor)). The power electronics substrate can be fastened (e.g. glued) directly on the housing (so-called module frame). Alternatively, the power electronics substrate can also be fastened (eg soldered) to a metal chassis, which in turn is arranged on the module frame. In this case the chassis actually forms the housing base of the power sem...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L23/544H01L23/473
CPCH01L2224/48091H01L2224/49171H05K1/053H01L23/3735H01L23/49811H01L23/62H01L25/18G01R31/2644G01R19/0092G01R31/2884H01L23/473H01L25/105H05K1/0203H05K2201/10151H05K2201/10287H01L2224/73265H01L2924/19107H01L2924/00014H01L25/07H01L23/3675H05K1/0296H05K1/181H05K5/0065H05K2201/10416
InventorU·奥塞勒克纳A·格雷斯曼
OwnerINFINEON TECH AG