A kind of fabrication method of gan substrate

Abstract

The invention provides a manufacturing method of a GaN substrate. Firstly, a lattice matching layer is formed on a support substrate and a dielectric layer possessing a graphical structure is formed on the lattice matching layer. Then, GaN material layers are grown on the lattice matching layer and the dielectric layer. And then, through a high temperature technology, the dielectric layer and the lattice matching layer react so that the lattice matching layer and the support substrate are completely separated from each other. Finally, the GaN material layers are flattened so as to form a GaN substrate. The GaN substrate made in the invention is used to make an LED chip so that crystal quality and illumination brightness of the LED chip are greatly increased and an advantage is possessed on an aspect of cost.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic chip manufacturing, and in particular relates to a method for manufacturing a GaN substrate. Background technique [0002] Since the commercialization of GaN-based LEDs in the early 1990s, after more than 20 years of development, its structure has become mature and perfect, and it has been able to meet people's current needs for lighting decoration; but it must completely replace traditional light sources and enter the lighting industry. In the field of lighting, especially in the field of high-end lighting, the improvement of luminous brightness is the never-ending pursuit of scientific researchers in the LED industry. [0003] The root cause of the limited improvement of LED luminous brightness is the lack of natural GaN materials in nature. There are very few heterogeneous substrate materials that can be used for GaN-based LEDs, and even fewer substrate materials that can be used for...

AI Technical Summary

Problems solved by technology

[0009] The vertical LED chip structure is suitable for large current injection, which can further improve the luminous brightness of the LED chip. However, the vertical structure LED chip requires complex and expensive ultraviolet laser lift-off equipment to separate the growth substrate from the epitaxial layer, and in the process of lift-off Among them, due to the infrasonic effect caused by the laser pulse, a large amount of stress is concentrated inside the chip, which will lead to a large leakage current in the fabricated vertical LED chip, that is, high cost and low yield

[0010] In summary, it is necessary to develop a GaN substrate manufacturing method to solve the problem of limited improvement of LED luminous brightness

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