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Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device

An optoelectronic device, mgxzn1-xo technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of hindering the electrical property regulation target of alloy thin films, low substitution doping efficiency, etc., and achieves simple structure, high luminous intensity, The effect of ensuring crystal quality

Active Publication Date: 2015-07-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ga is the most common doping scheme to obtain n-ZnO, but in Mg x Zn 1-x O (especially the high Mg component Mg x Zn 1-x O), due to the stronger bonding between Mg and O, the Ga substitution doping efficiency is low, which hinders the Mg x Zn 1-x Realization of the goal of electrical regulation of O alloy thin films

Method used

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  • Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device
  • Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device
  • Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1: Preparation of fluorine-doped Mg on a sapphire single crystal substrate by radio frequency plasma-assisted molecular beam epitaxy 0.5 Zn 0.5 O film. Specific steps are as follows:

[0044] The organic matter on the surface of the sapphire single crystal substrate is removed by ultrasonic cleaning such as acetone, alcohol and deionized water, and then introduced into the RF plasma-assisted molecular beam epitaxy system;

[0045] ZnF 2 As a doping source, F-doped Mg was deposited on a sapphire single crystal substrate 0.5 Zn 0.5 O(0001)) layer, the growth conditions are as follows: the substrate temperature is 450°C, the beam current of Mg is 1.9x10 14 atoms / cm 2 s, the beam current of Zn is 2.5x10 14 atoms / cm 2 s, oxygen flow rate 2.6sccm, RF power 340W, ZnF 2 The doping temperature was 420°C, and the deposition time was 2 hours to obtain a film with a thickness of about 270 nm.

[0046] During the film preparation process, the samples were monitored...

Embodiment 2

[0050] Example 2: Preparation of fluorine-doped Mg on sapphire single crystal substrate by radio frequency plasma assisted molecular beam epitaxy 0.45 Zn 0.55 O film. Specific steps are as follows:

[0051] ZnF 2 As a dopant source, growth of fluorine-doped Mg 0.45 Zn 0.55 O(0001) layer, the growth conditions are: the substrate temperature is 450°C, the beam current of Mg is 1.7x10 14 atoms / cm 2 s, the beam current of Zn is 2.5x10 14 atoms / cm 2 s, oxygen flow rate 2.6sccm, RF power 340W, ZnF 2 The doping temperature was 390°C, and the deposition time was 2 hours to obtain a film with a thickness of about 240 nm.

[0052] RHEED in-situ monitoring results and XRD test show that the prepared film is Mg with high Mg component 0.45 Zn 0.55 O(0001) single crystal sample. Reflection spectrum test results show that the forbidden band width of the film is 4.29eV (corresponding to 289nm), indicating that fluorine-doped Mg 0.45 Zn 0.55 O thin films can be used in ultraviole...

Embodiment 3

[0054] Example 3: Preparation of fluorine-doped Mg on a silicon single crystal substrate by radio frequency plasma assisted molecular beam epitaxy 0.3 Zn 0.7 O film. Specific steps are as follows:

[0055] ZnF 2 As a dopant source, growth of fluorine-doped Mg 0.3 Zn 0.7 O(0001) layer. The growth conditions are: the substrate temperature is 450°C, the beam current of Mg is 1.4x10 14 atoms / cm 2 s, the beam current of Zn is 2.5x10 14 atoms / cm 2 s, oxygen flow rate 2.6sccm, RF power 340W, ZnF 2 The doping temperature was 390°C, and the deposition time was 2 hours to obtain a film with a thickness of about 210 nm.

[0056] RHEED in-situ monitoring results and XRD test show that the prepared film is Mg 0.3 Zn 0.7 O(0001) single crystal sample. Reflection spectrum test results show that the film has a forbidden band width of 3.95eV (314nm), indicating that fluorine-doped Mg 0.3 Zn 0.7 O thin films can be used in ultraviolet detectors.

[0057] The electrical propertie...

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Abstract

The invention provides a method for improving the conductivity of MgxZn(1-x)O and an application of MgxZn(1-x)O in a photoelectronic device. The method for improving the conductivity of MgxZn(1-x)O comprises the step of doping a MgxZn(1-x)O film with fluorine to obtain a fluorine-doped MgxZn(1-x)O film or directly preparing a fluorine-doped MgxZn(1-x)O film. The photoelectronic device of the invention comprises an active layer and a metal electrode layer arranged on the active layer, wherein the active layer comprises a fluorine-doped MgxZn(1-x)O film. Electrical control on MgxZn(1-x)O including deep ultraviolet is realized by fluorine doping. Excess carriers are provided through effective doping of fluorine atoms, and therefore, an n-type conductivity MgxZn(1-x)O film with greatly improved electrical performance is obtained.

Description

technical field [0001] The invention relates to a method for regulating the electrical properties of a semiconductor oxide film, in particular to a method for increasing Mg x Zn 1-x Methods for O conductivity and their applications in optoelectronic devices. Background technique [0002] Wurtzite Phase Wide Bandgap Oxide Semiconductor Mg x Zn 1-x O (can be abbreviated as MgZnO) is made of wurtzite phase ZnO and rock salt phase MgO alloy. Its band gap can theoretically be continuously adjusted from 3.37eV to 7.8eV, covering most of the near-ultraviolet and mid-ultraviolet regions. Then it can be tuned from a semiconductor to an insulator. Therefore, by adjusting the Mg composition x, Mg that works in different ultraviolet bands and has very different conductive properties can be obtained. x Zn 1-x O alloy film. This feature makes MgZnO, as an active material for electro-optic conversion or photoelectric conversion, have greater advantages in the field of optoelectronic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0264H01L31/18
CPCY02P70/50
Inventor 刘利书梅增霞侯尧楠刘章龙梁会力刘尧平杜小龙
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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