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A High Linearity Low Noise Transconductance Amplifier

A transconductance amplifier and low-noise technology, applied in differential amplifiers, DC-coupled DC amplifiers, improved amplifiers to reduce noise effects, etc., can solve the problems of not meeting the linearity performance requirements of wireless systems and deteriorating the linearity of low-noise amplifiers

Active Publication Date: 2017-11-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inherent second-order nonlinear interaction of the feedback circuit deteriorates the linearity of traditional active feedback low-noise amplifiers, which cannot meet the increasingly stringent linearity performance requirements of today's wireless systems

Method used

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  • A High Linearity Low Noise Transconductance Amplifier
  • A High Linearity Low Noise Transconductance Amplifier
  • A High Linearity Low Noise Transconductance Amplifier

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Embodiment Construction

[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0039] A kind of high linearity low noise transconductance amplifier of the present invention, its structure is as follows image 3 As shown, it includes: a first input terminal, a second input terminal, a first part of the circuit and a second part of the circuit, the first input is connected to the first part of the circuit, the second input is connected to the second part of the circuit, and The first part of the circuit and the second part of the circuit have a mirror symmetrical structure; in addition, the present invention also includes a common-mode feedback circuit for stabilizing the common-mode voltage of the output node.

[0040] The first part of the circuit includes: a first complementary common-source stage, a second complementary com...

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Abstract

The invention discloses a low-noise transconductance amplifier, in particular a differential input / output structure. The circuits on the left and right sides both include two complementary common source stages, a feedback stage and a load stage including complementary source followers and resistors; After the differential RF input signal enters the input ports Vin+ and Vin‑, it is converted into a current signal by the two NMOS / PMOS complementary common source tubes on the left and right, respectively, and transmitted to the output nodes IO+, IO‑; the left and right sides are output The current is converted into a differential output voltage signal through the left and right load stages respectively. The differential output voltage signal is converted into a current signal after passing through the left and right feedback stages and flows into the input ports Vin+ and Vin‑ to achieve input impedance matching. Both the forward path and the feedback path adopt the complementary symmetrical structure of NMOS / PMOS transistors to achieve current multiplexing and good linearity. The invention can significantly improve the small-signal and large-signal linearity and anti-blocking of the transconductance amplifier in a wide frequency band. ability to interfere.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a high-linearity and low-noise transconductance amplifier. Background technique [0002] In recent years, people's urgent demand for high data rate has greatly stimulated the research, development and application of multi-mode and multi-band RF receivers. Traditional multi-mode multi-band receivers use separate optimized receiving front-end circuits for each frequency band, resulting in larger chip area and power consumption (shortening battery life). At the same time, in the face of extremely large out-of-band interference (such as 0dBm out-of-band interference specified in the GSM standard), it is common to use off-chip bulky surface acoustic wave (SAW) filters, such as figure 1 As shown in (a), this further increases the board size and overall cost. In order to reduce hardware cost as much as possible and achieve single-chip integration, figure 1 The non-SAW transceiver s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26H03F1/32H03F1/34H03F3/45
Inventor 陈俊文光俊
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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