Check patentability & draft patents in minutes with Patsnap Eureka AI!

High-linearity low-noise transconductance amplifier

A transconductance amplifier, low-noise technology, used in differential amplifiers, DC-coupled DC amplifiers, improved amplifiers to reduce noise effects, etc., can solve the problem of not meeting the linearity performance requirements of wireless systems and deteriorating the linearity of low-noise amplifiers

Active Publication Date: 2016-01-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inherent second-order nonlinear interaction of the feedback circuit deteriorates the linearity of traditional active feedback low-noise amplifiers, which cannot meet the increasingly stringent linearity performance requirements of today's wireless systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-linearity low-noise transconductance amplifier
  • High-linearity low-noise transconductance amplifier
  • High-linearity low-noise transconductance amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments.

[0039] The present invention is a high linearity low noise transconductance amplifier, and its structure is as follows image 3 As shown, it includes: a first input terminal, a second input terminal, a first partial circuit, and a second partial circuit. The first input terminal is connected to the first partial circuit, and the second input terminal is connected to the second partial circuit, and The first part of the circuit and the second part of the circuit have a mirror symmetric structure; in addition, the present invention also includes a common mode feedback circuit for stabilizing the common mode voltage of the output node.

[0040] The first part of the circuit includes: a first complementary common source stage, a second complementary commo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-noise transconductance amplifier, which is specifically of a differential input / output structure. Each of a left side circuit and a right side circuit comprises two branches of complementary common source cascades, a feedback cascade comprising a complementary source cascade follower and resistors, and a load cascade; after a differential radio frequency input signal enters input ports Vin<+> and Vin<->, the signal is converted into a current signal by two branches of NMOS / PMOS complementary common source tubes at the left side and the right side, and the current signal is transmitted to output nodes IO<+> and IO<->; output currents at the left side and the right side respectively pass through the left load cascade and the right load cascade to be converted into a differential output voltage signal, and the differential output voltage signal is converted into a current signal after passing through the left feedback cascade and the right feedback cascade and flows into the input ports Vin<+> and Vin<->, so that input impedance matching is realized. A forward access and a feedback access both adopt NMOS / PMOS transistor complementary symmetrical structures to realize current reuse and good linearity, and small signal and big signal linearity of the transconductance amplifier and anti-barrage jamming capacity can be remarkably improved in a relatively wide frequency band.

Description

Technical field [0001] The invention belongs to the field of integrated circuits, and particularly relates to a high linearity low noise transconductance amplifier. Background technique [0002] In recent years, people's urgent demand for high data rates has greatly stimulated the research, development and application of multi-mode and multi-band radio frequency receivers. Traditional multi-mode and multi-band receivers use receiving front-end circuits optimized for each frequency band, resulting in a larger chip area and power consumption (shortened battery life). At the same time, in the face of great out-of-band interference (such as 0dBm out-of-band interference specified by the GSM standard), off-chip bulky surface acoustic wave (SAW) filters are commonly used, such as figure 1 As shown in (a), this further increases the board size and overall cost. In order to reduce hardware costs as much as possible and achieve single-chip integration, figure 1 The structure of the SAW-f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F1/26H03F1/32H03F1/34H03F3/45
Inventor 陈俊文光俊
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More