V-coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval

A technology of frequency spacing and coupling cavity, applied in the field of microwave photonics, can solve the problems of long device size, low yield, difficult to precisely control the width of deep etched grooves, etc. Mode selective effects

Active Publication Date: 2018-02-27
ZHEJIANG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

However, due to the limitation of the precision of the manufacturing process, it is difficult to accurately control the width of the deep etching groove, and the size of the device is relatively long, so the yield of the production is not high.

Method used

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  • V-coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval
  • V-coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval
  • V-coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval

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Embodiment Construction

[0044] The present invention will be described in detail below according to the drawings and embodiments.

[0045] The present invention uses a semiconductor laser based on coupled cavity coupling, and utilizes multi-segment FP cavity coupling to generate dual wavelengths. Compared with the first two methods in the background technology, the microwave spectrum line width produced by it will have a certain broadening, but because the two wavelengths share A gain cavity has the same external environment and a strong phase correlation between two wavelengths, which can achieve better microwave spectrum characteristics.

[0046] Embodiments of the present invention and working principle thereof are as follows:

[0047] In specific implementation, such as image 3 As shown, the present invention includes two equal-length active Fabry-Perot resonators and two unequal-length passive Fabry-Perot resonators, and the two arms of the V-shaped cavity pass through a quarter The wavelengt...

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Abstract

The invention discloses a V-shaped coupled cavity double-wavelength semiconductor laser with continuously adjustable frequency interval. The first active resonant cavity and the second active resonant cavity are coupled in a V-shape at one end to form a multimode coupling region, the end face of the multimode coupling region has a cavity surface reflection surface, the other end of the first active resonant cavity and the first passive The source filters are connected in series through deep etched grooves to form one arm of the laser; the other end of the second active resonator and the second passive filter are connected in series through deep etched grooves to form the other arm of the laser; the first active Shallow etching grooves are arranged on the resonant cavity and the second active resonant cavity. The laser of the invention has the advantages of compact structure, simple manufacturing process, low cost, no external reference light source and the like.

Description

technical field [0001] The invention relates to the field of microwave photonics, in particular to a single-chip integrated and continuously adjustable frequency interval V-shaped coupling cavity double-wavelength semiconductor laser for microwave generation. Background technique [0002] Signals in the microwave frequency band have very important applications in many fields such as wireless communication, radar detection, and microwave sensing. Especially in recent years, with the rapid increase of users' requirements for wireless data traffic and the rapid development of "mobile Internet", high-speed broadband wireless communication technology has become the development direction of next-generation wireless communication technology and a new growth point of market demand. Microwave photon technology, especially the generation of microwave light source, as the core technology of "mobile Internet", is becoming a research hotspot in various research groups and academic instit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/02
Inventor 何建军胡志朋
Owner ZHEJIANG UNIV
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