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Array substrate row driving structure and display panel

A technology of array substrate row and drive structure, applied in nonlinear optics, instruments, optics, etc., can solve the problem of polysilicon layer can not be

Active Publication Date: 2018-09-04
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By replacing the polysilicon layer of the sandwich capacitor in the existing array substrate row drive (GOA) structure with a transparent conductive layer, the polysilicon layer in the prior art cannot be used as the sandwich capacitor because it cannot be doped (Dopping) The problem with the electrode

Method used

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  • Array substrate row driving structure and display panel
  • Array substrate row driving structure and display panel
  • Array substrate row driving structure and display panel

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Embodiment Construction

[0046] In order to further explain the technical means and functions adopted by the present invention to achieve the intended invention purpose, the specific implementation of the array substrate row drive (GOA) structure and display panel proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows.

[0047] Please refer to Figure 3A and Figure 3B , Figure 3A It is a partial cross-sectional structural schematic diagram of an array substrate row driving (GOA) structure 20 in an embodiment of the present invention; Figure 3B for Figure 3A A top view of the stacking relationship among the first metal layer 203 , the second metal layer 205 and the transparent conductive layer 207 . The array substrate row driving (GOA) structure 20 is integrated in a display panel. The array substrate row drive (GOA) structure 20 inc...

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Abstract

The invention discloses a structure of a gate driver on array (GOA) and a display panel. According to the structure of the gate driver on array and the display panel, a polycrystalline silicon layer of a sandwich capacitor in an existing structure of a gate driver on array (GOA) is replaced with a transparent conducting layer, and the problem that in the prior art, the polycrystalline silicon layer cannot serve as an electrode of the sandwich capacitor due to the fact that the polycrystalline silicon layer cannot be subjected to dopping can be solved.

Description

technical field [0001] The present invention relates to a display technology, in particular to a Gate Driver on Array (GOA) structure of an array substrate and a display panel. Background technique [0002] With the rapid development of Thin film transistor liquid crystal display (TFT-LCD), various manufacturers adopt new technologies to improve market competitiveness of products and reduce product costs. [0003] Among them, the Gate Driver on Array (GOA) technology, as a representative of new technology, is to integrate the gate (Gate) switch circuit on the array substrate to remove the part of the gate driver integrated circuit, thereby saving materials and reducing Process steps to achieve the purpose of reducing product costs. [0004] Please refer to figure 1 , which is a structural schematic diagram of an array substrate row driver (GOA) circuit based on an existing LTPS (Low Temperature Poly-silicon, low temperature polysilicon) NMOS (N-type metal oxide semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/1345
CPCG02F1/13454G02F1/136213G02F1/136227
Inventor 龚强曹尚操
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD