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Compositions and methods for removing ceria particles from a surface

A technology of composition and surfactant, applied in the direction of surface active detergent composition, polymer surface active compound, chemical instrument and method, etc., can solve the problem of unfavorable etching of silicon oxide low-k dielectric materials, etc.

Inactive Publication Date: 2016-02-03
ENTEGRIS INC
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Currently the most effective wet cleaning formulation is dilute hydrofluoric acid (DHF), however DHF detrimentally etches silicon oxide and other low-k dielectric materials

Method used

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  • Compositions and methods for removing ceria particles from a surface

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Embodiment Construction

[0015] The present invention relates generally to compositions useful for removing cerium oxide particles and CMP contaminants from microelectronic devices having such materials thereon. Advantageously, cerium oxide particles and CMP contaminants are effectively removed while still being compatible with silicon nitride and low-k dielectric (eg, silicon oxide) layers. Furthermore, the compositions described herein are compatible with conductive metals such as tungsten.

[0016] For ease of reference, "microelectronic device" corresponds to semiconductor substrates, flat panel displays, phase change memory devices, solar panels, and microelectromechanical systems including solar substrates, photovoltaic devices, and fabrication for microelectronic, integrated circuit, or computer chip applications (MEMS) other products. Solar substrates include, but are not limited to, silicon, amorphous silicon, polycrystalline silicon, monocrystalline silicon, CdTe, copper indium selenide, co...

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Abstract

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Description

technical field [0001] The present invention relates generally to compositions for removing cerium oxide particles and other chemical mechanical polishing slurry contaminants thereon from microelectronic devices. Background technique [0002] Microelectronic device wafers are used to form integrated circuits. A microelectronic device wafer includes a substrate, such as silicon, in which patterned regions are formed to deposit different materials having insulating, conducting, or semiconducting properties. [0003] To achieve proper patterning, excess material used to form the layers must be removed from the substrate. Furthermore, to fabricate functional and reliable circuits, it is important to prepare flat or planar microelectronic wafer surfaces followed by subsequent processing. Therefore, it is necessary to remove and / or polish certain surfaces of the microelectronic device wafer. [0004] Chemical mechanical polishing or planarization ("CMP") is a process in which m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D3/26C11D3/00C11D1/00C09K3/14
CPCC11D3/0042C11D3/30C11D3/33C11D11/0047H01L21/02065C11D1/008C11D3/2072C11D3/2086C11D3/2096H01L21/02057
Inventor 刘俊孙来生
Owner ENTEGRIS INC