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Data storage method, memory control circuit unit and memory storage apparatus

A technology for data storage and control circuits, which is applied in electrical digital data processing, special data processing applications, instruments, etc., and can solve problems such as waste of storage space in memory storage devices.

Active Publication Date: 2016-02-17
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is to say, this approach will cause a waste of storage space in the memory storage device

Method used

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  • Data storage method, memory control circuit unit and memory storage apparatus
  • Data storage method, memory control circuit unit and memory storage apparatus
  • Data storage method, memory control circuit unit and memory storage apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0107] [First Exemplary Embodiment]

[0108] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0109] Figure 1A is a schematic diagram of a host system and a memory storage device according to a first exemplary embodiment of the present invention.

[0110] Please refer to Figure 1A , the host system 1000 generally includes a computer 1100 and an input / output (input / output, I / O for short) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device 1106 includes such as Figure 1B mouse 1202, keyboard 1204, monitor 1206 and printer 1208. It i...

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PUM

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Abstract

The invention provides a data storage method, a memory control circuit unit and a memory storage apparatus. The method comprises: generating odd-even information according to first data. The method further comprises: when the first data are programmed to a first entity programming unit, programming at least one mark to a redundancy bit region in the first entity programming unit. The method further comprises: programming the odd-even information into at least one second entity programming unit arranged after the first entity programming unit, wherein the at least one mark indicates that the odd-even information is programmed into the at least one second entity programming unit.

Description

technical field [0001] The present invention relates to a data storage method, and in particular to a data storage method for a rewritable non-volatile memory, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., in recent years, the rewritable non-volatile memory industry Become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer. [0003] Because the data stored in the rewritable non-volatile memory may generate error bits due to vario...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/08G06F17/30
Inventor 叶志刚
Owner PHISON ELECTRONICS