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Semiconductor device with shield structure

A shielding structure, semiconductor technology, applied in the direction of semiconductor devices, electrical components, thyristors, etc.

Active Publication Date: 2018-04-13
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The edge region surrounds the active semiconductor region

Method used

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  • Semiconductor device with shield structure
  • Semiconductor device with shield structure
  • Semiconductor device with shield structure

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Embodiment Construction

[0023] In the following detailed description, reference will be made to the accompanying drawings. The drawings form a part of the description and show by way of illustration specific embodiments in which the invention may be practiced. Unless explicitly stated otherwise, it should be understood that the features of various embodiments described herein can be combined with each other.

[0024] Figure 1A and Figure 1B A semiconductor body 100 of a power semiconductor component 1 is schematically illustrated. Figure 1A is a side view, and Figure 1B for top view. The semiconductor body 100 has a top side 101 , a bottom side 102 opposite the top side 101 , and a surface 103 . The top side 101 is arranged away from the bottom side 102 in a vertical direction v extending perpendicular to the bottom side 102 . For the sake of clarity, the metallizations, electrodes, dielectric layers etc. and the detailed internal structure arranged on the semiconductor body 100 are given in ...

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Abstract

The present invention provides a semiconductor device having a shield structure. A semiconductor device has a semiconductor body comprising opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor region formed in the edge region A first semiconductor region of a conductivity type, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on the side of the edge termination structure facing away from the bottom side. The shielding structure has N1≥2 first segments and N2≥1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has a higher resistance than each of the first segments Rate.

Description

technical field [0001] Embodiments of the invention relate to semiconductor devices with field rings or JTE (Junction Termination Extension) or VLD (VLD=Laterally Variable Doping) edge termination structures. Background technique [0002] Power semiconductor devices such as power diodes, power MOSFETs, power IGBTs or any other power semiconductor devices are designed to withstand high blocking voltages, eg at least 600V. These power devices include a pn junction formed between a p-type doped semiconductor region and an n-type doped semiconductor region. When the pn junction is reverse biased, the device is in its blocking mode. In this case, the depletion region (space charge region) extends in the p-doped and n-doped regions. Usually, one of these n-doped and p-doped semiconductor regions is more lightly doped than the other of these semiconductor regions, so that the depletion region extends mainly in the lighter doped region, the lighter The doped region mainly bears t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06
CPCH01L29/0603H01L29/0615H01L29/0619H01L29/0638H01L29/404H01L29/7395H01L29/74H01L29/7811H01L29/7813H01L29/8611H01L29/872H01L29/063
Inventor E·法尔克K·布赫霍尔茨M·戴内塞H-J·舒尔策G·施密特F·翁巴赫
Owner INFINEON TECH AG