A derivative of tetraphenyl silicon and dibenzothiophene and its preparation method
A technology of dibenzothiophene and tetraphenylsilicon, which is applied in the field of organic electroluminescent display, can solve the problems of rare hole transport materials, achieve improved electron injection/transport capabilities, good thermal stability, and reduce molecular weight. Effects of agglomeration and interaction between
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Embodiment 1
[0025] Example 1, a derivative of tetraphenylsilicon and dibenzothiophene, the derivative has the following structure:
[0026] , the derivative has hole transport properties and can be used for OLED display; in this embodiment, R is methyl, and the structure of the derivative is as follows:
[0027]
[0028] Above-mentioned derivative adopts following steps to prepare:
[0029]
[0030] Wherein the preparation of compound I:
[0031]
[0032] Under the protection of argon, add 14.87g of 1,4-dibromobiphenyl and 210 mL of tetrahydrofuran to the three-necked flask successively, cool to -78 °C, add 26.25 mL of n-butyllithium dropwise, after the addition is complete, stir at -78 °C After 1 hour, 7.59 g of dichlorodiphenylsilane was slowly added dropwise. After the dropwise addition, the temperature was automatically raised after 1 hour of heat preservation reaction, and the reaction was carried out overnight. Add water to quench the reaction, distill off the solvent, ...
Embodiment 2
[0056] Example 2, a derivative of tetraphenylsilicon and dibenzothiophene. In this example, R is ethyl, and the structure of the derivative is as follows:
[0057]
[0058] The preparation method of above-mentioned derivative is as follows:
[0059]
[0060] Derivative VII-2 refers to the preparation process of Example 1, except that methyl iodide in the fourth step is changed to ethyl bromide. Derivative VII-2: 1 H NMR (400 MHz, CDCl 3 ) δ= 8.69 (dd, J = 4.5, 1.6 Hz, 2H, Ar-H),8.24–8.10 (m, 2H, Ar-H), 7.89–7.73 (m, 7H, Ar-H), 7.74–7.62 (m, 6H, Ar-H), 7.62–7.40 (m, 12H, Ar-H), 3.98 (m, 4H, OCH 2 -H), 1.33(m, 6H, Me-H); LC-MS (ESI): 683 [M-H] - , element analysis measured value (calculated value) / %: C79.03 (79.01), H5.45 (5.47), N2.05 (2.03), O4.68 (4.70), S4.69 (4.70), Si4.11 (4.10).
[0061] Melting point: 291°C, glass transition temperature: 118°C, decomposition temperature: 435°C
[0062] Absorption spectrum: λmax=282nm
[0063] Fluorescence spectrum: λmax=37...
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