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MOCVD equipment spray head and vapour reaction control method thereof

A technology of gas phase reaction and control method, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as gas phase pre-reaction, and achieve the effect of improving quality and accurately controlling quality

Inactive Publication Date: 2016-03-23
SUN YAT SEN UNIV
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Problems solved by technology

[0003] In view of the above problems in the prior art, the present invention aims to provide a premixed MOCVD equipment shower head capable of separating MO source gas and oxygen source gas, and also provides gas phase reaction control of the MOCVD equipment shower head method, thereby solving the MOCVD ubiquitous gas phase pre-reaction problem existing in the prior art

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  • MOCVD equipment spray head and vapour reaction control method thereof
  • MOCVD equipment spray head and vapour reaction control method thereof

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Embodiment Construction

[0036] The purpose of the invention, technical solutions and beneficial effects of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments:

[0037] refer to Figure 1 to Figure 2 , the present invention provides a preferred embodiment of the shower head of MOCVD equipment, the shower head of MOCVD equipment includes an air inlet device, a reaction chamber and a rotating base, wherein: the air inlet device includes a cover 10, and is arranged on the cover 10 The MO source channel 101, the protective gas channel 102, the oxygen source channel 103, and the observation channel 104. The cover body 10 is closely connected with the top of the reaction chamber, and the MO source channel 101 , the protective gas channel 102 , the oxygen source channel 103 and the observation channel 104 all extend to the reaction chamber. The protective gas channel 102 is arranged between the MO source channel 101 and the oxygen sou...

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Abstract

The invention provides an MOCVD equipment spray head. The MOCVD equipment spray head comprises an MO source channel, a protective gas channel, an oxygen source channel, an observation channel and a reaction cavity, wherein an MO source gas and a protective gas directly reach the interior of the reaction cavity through the MO source channel and the protective gas channel respectively; an oxygen source gas is dispersed through a buffer cavity and then reaches the reaction cavity through the oxygen source channel; the protective gas channel is arranged between the MO source channel and the oxygen source channel; and the protective gas forms a gas wall in the reaction cavity so as to prevent pre-mixing of the MO source gas and the oxygen source gas in the reaction cavity before reaching a rotary base, thus the quality of film growth of MOCVD equipment is improved. According to the MOCVD equipment spray head provided by the invention, the thickness and the length of the gas wall can be controlled through controlling the flow rate of the protective gas, and the quality of film growth can be accurately controlled through designing the observation channel, the MO source channel, the protective gas channel and the oxygen source channel, so as to obtain a high-quality film.

Description

technical field [0001] The invention relates to the technical field of metal chemical vapor deposition, in particular to a shower head of MOCVD equipment and a gas phase reaction control method thereof. Background technique [0002] MOCVD (Metal-organic Chemical Vapor Deposition), that is, metal organic compound chemical vapor deposition, is a key technology for preparing compound semiconductor thin films. One of the important indicators for preparing thin films is the uniformity of their thickness and composition. In MOCVD technology, it is necessary to grow large-area high-quality thin-film materials with uniform thickness and composition. First, the velocity across the substrate and the concentration of reactants reaching the substrate should be as uniform as possible. This requires that the production speed everywhere on the surface of the substrate and the concentration of reactants reaching the substrate should be as uniform as possible. This requires that there is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/52
Inventor 王钢李健范冰丰蔡健栋徐晨
Owner SUN YAT SEN UNIV
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