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Test method for storage unit reliability

A technology of storage unit and testing method, which is applied in the direction of static memory, instrument, etc., can solve the problem of low precision, and achieve the effect of simple method, short programming time and high precision

Active Publication Date: 2018-09-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of testing method of the reliability of storage unit, can test the reliability of storage unit by testing the working state of storage unit, have high precision, save The programming time is used to solve the problem of low accuracy in the prior art that uses the threshold voltage to measure the reliability of the device

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Embodiment Construction

[0047] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0048] The following embodiments of the present invention all take a storage unit of a flash memory as an example. Flash memory (Flash Memory) is a new type of EEPROM (Electrically Erasable Programmable Read-Only Memory, electrically erasable programmable read-only memory, commonly used SCM, users can read and write through program control). Flash memory has the advantage of being able to save data even when the power is turned off. A...

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Abstract

The invention provides a method for testing reliability of a memory cell. The memory cell comprises a first threshold-voltage for starting the erasing state and a second threshold-voltage for starting the programming state. The method for testing reliability of the memory cell at least comprises the following steps: presetting a Vsense (sense voltage); carrying out an erasing operation or a programming operation for the memory cell, and reading a current voltage of the memory cell; comparing the current voltage with the Vsense, and determining the current working state of the memory cell according to a comparison result; judging whether the current working state of the memory cell conforms to the operation; if so, determining normal working of the memory cell; if not, determining failure of the memory cell. The working state of the memory cell is tested in order to test reliability of the test memory cell; the method has the advantages of high accuracy, short programming time, and simple process; reliability of the memory product can be rapidly and accurately evaluated, and the programming time is saved at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for testing the reliability of a storage unit. Background technique [0002] SCM (Semi-Conductor Memory, semiconductor memory) is a memory device commonly used in various electronic devices (such as computer systems) to store programs and data. SCM is composed of a number of memory chips made by VLSI technology, and each memory chip contains a considerable number of memory cells. [0003] Electrical properties such as Data Retention and Endurance of the storage unit are parameters for evaluating the performance of the SCM. After the SCM is manufactured, the reliability test of the storage unit is usually performed to evaluate the performance of the SMC. Data retention is the ability to keep stored information for a long time, usually 10 years. Endurance is the ability to sustain 100k to 1M read / write / erase cycles without losing stored information. [0004] Ther...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/08
Inventor 牛刚
Owner SEMICON MFG INT (SHANGHAI) CORP
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