A method for fabricating a stepped thick gate oxide layer
A production method and oxide layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems affecting the performance of high-voltage devices, high cost, and restricting the integrated development of semiconductor devices
Active Publication Date: 2018-08-03
CHENGDU MONOLITHIC POWER SYST
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Problems solved by technology
However, the thickness of the stepped thick gate oxide layer produced by the above process is generally only about 1000 angstroms, which cannot withstand sufficient voltage and affects the performance of the entire high-voltage device
In addition, the high cost of this manufacturing method restricts the development of semiconductor device integration
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specific Embodiment
[0012] Figure 1-13 A flow chart of manufacturing the stepped thick gate oxide layer 108 according to an embodiment of the present invention is shown, and a specific embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
[0013] Such as figure 1 As shown, a first pad oxide layer 102 is formed on a semiconductor substrate 101 . The first pad oxide layer 102 can protect the surface of the semiconductor substrate 101 (such as silicon) from mechanical pressure caused by subsequent processes, and can be formed by thermal oxidation or deposition. In one embodiment, the material of the first pad oxide layer 102 is silicon dioxide, and the thickness interval is
[0014] Such as figure 2 As shown, a nitride layer 103 is formed on the first pad oxide layer 102 . In one embodiment, the nitride layer 103 is formed by deposition techniques, such as chemical vapor deposition techniques. In one embodiment, the material of t...
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Abstract
Disclosed is a method for fabricating a stepped thick gate oxide layer. The manufacturing method can reduce the number of masks in the step-type thick gate oxide layer manufacturing process, and reduce the manufacturing cost of high-voltage devices in the high-voltage BCD process. In addition, by using the manufacturing method, the size of the stepped thick gate oxide layer is easy to control, which is beneficial to improving the performance of the entire high-voltage device, and the total thickness of the thick gate oxide layer can reach more than 3000 Angstroms, which can withstand higher voltages.
Description
technical field [0001] The invention relates to the manufacture of semiconductor devices, more specifically, the invention relates to a method for manufacturing a stepped thick gate oxide layer in a high-voltage BCD process. Background technique [0002] In the integrated circuit structure of the high-voltage BCD (bipolar-complementary metal-oxide-semiconductor-double-diffused metal-oxide-semiconductor, Bipolar-CMOS-DMOS) process, a thick gate oxide layer is usually required to fabricate a high-voltage MOS device. Compared with high-voltage MOS devices with traditional thick gate oxide layers, high-voltage MOS devices with stepped thick gate oxide layers can reduce on-resistance and effectively weaken the surface electric field at the drain terminal under the gate to increase breakdown voltage. The manufacturing process of the stepped thick oxide layer in the prior art is as follows: after depositing a traditional thick gate oxide layer using the mask 1 , then using the mask...
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IPC IPC(8): H01L21/28
CPCH01L21/28H01L29/401H01L29/42368H01L21/28158H01L29/7816H01L29/4916H01L29/42364H01L21/02164H01L21/0217H01L21/02274H01L21/0228H01L21/02129H01L21/31144H01L21/31111H01L21/32055H01L21/32139H01L21/32135H01L29/66681
Inventor 连延杰
Owner CHENGDU MONOLITHIC POWER SYST