A silicon heterojunction solar cell and its interface treatment method
A solar cell and interface treatment technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of reducing interface performance and battery performance, and achieve the effect of improving battery performance
Active Publication Date: 2018-10-26
ENN SOLAR ENERGY
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However, the transfer chamber is directly connected to the vacuum sample delivery chamber, and pollutants such as dust, impurities, and moisture will enter the transfer chamber during the transfer process, resulting in new contamination of the hydrogenated amorphous silicon i film during the transfer process. , thereby reducing the interface performance between the hydrogenated amorphous silicon i-film layer and the hydrogenated amorphous silicon p-film layer and the interface performance between the hydrogenated amorphous silicon i-film layer and the hydrogenated amorphous silicon n-film layer, thereby reducing battery performance
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[0018] In order to remove the contamination of the hydrogenated amorphous silicon i film layer during the deposition and transfer process, ensure the interface between the hydrogenated amorphous silicon i film layer and the hydrogenated amorphous silicon p film layer and the hydrogenated amorphous silicon i film layer and hydrogenation The interface properties between amorphous silicon n-film layers can improve battery performance, and the invention provides a new interface treatment method for silicon heterojunction solar cells. In order to make the purpose, technical solution and advantages of the present invention clearer, the following examples are given to further describe the present invention in detail.
[0019] Such as figure 1 As shown, an embodiment of the present invention provides an interface treatment method for silicon heterojunction solar cells, including:
[0020] S1. Depositing a hydrogenated amorphous silicon i-film layer in a deposition chamber for a hydro...
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Abstract
The invention discloses a silicon heterojunction solar cell and an interface treatment method thereof, which improves the interface treatment method of the heterojunction solar cell. Before depositing a hydrogenated amorphous silicon n-film layer or a hydrogenated amorphous silicon p-film layer, Perform hydrogen plasma interface treatment on the hydrogenated amorphous silicon i-film layer delivered to its deposition chamber to remove the contamination generated again during the deposition and transmission process of the hydrogenated amorphous silicon i-film layer to ensure the hydrogenated amorphous silicon i-film layer The performance of the interface between the hydrogenated amorphous silicon p-film layer and the hydrogenated amorphous silicon i-film layer and the hydrogenated amorphous silicon n-film layer improves battery performance.
Description
technical field [0001] The invention relates to the technical field of solar cell production, in particular to a silicon heterojunction solar cell and an interface treatment method thereof. Background technique [0002] Silicon heterojunction solar cell is a hybrid cell made of crystalline silicon substrate and amorphous silicon thin film technology. It has the advantages of high conversion efficiency, simple process flow, and low temperature coefficient, and has attracted widespread attention. The production process of existing silicon heterojunction solar cells includes: cleaning, texturing, hydrogenated amorphous silicon i(ia-Si:H) film layer and hydrogenated amorphous silicon p(pa-Si:H) film layer and hydrogenation Deposition of amorphous silicon n(na-Si:H) film, deposition of transparent conductive oxide film, screen printing of gate electrode, annealing, etc. [0003] Hydrogen plasma treatment technology is one of the important preparation processes for silicon hetero...
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IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 李立伟谷士斌何延如张林张娟徐湛杨荣孟原郭铁
Owner ENN SOLAR ENERGY